View source for Micron technology, inc. (20240251563). MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE simplified abstract

=MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Kamal M. Karda of Boise ID (US)|Kamal M. Karda of Boise ID (US)]][[Category:Kamal M. Karda of Boise ID (US)]]

[[:Category:Eric S. Carman of San Francisco CA (US)|Eric S. Carman of San Francisco CA (US)]][[Category:Eric S. Carman of San Francisco CA (US)]]

[[:Category:Karthik Sarpatwari of Boise ID (US)|Karthik Sarpatwari of Boise ID (US)]][[Category:Karthik Sarpatwari of Boise ID (US)]]

[[:Category:Durai Vishak Nirmal Ramaswamy of Boise ID (US)|Durai Vishak Nirmal Ramaswamy of Boise ID (US)]][[Category:Durai Vishak Nirmal Ramaswamy of Boise ID (US)]]

[[:Category:Richard E. Fackenthal of Carmichael CA (US)|Richard E. Fackenthal of Carmichael CA (US)]][[Category:Richard E. Fackenthal of Carmichael CA (US)]]

[[:Category:Haitao Liu of Boise ID (US)|Haitao Liu of Boise ID (US)]][[Category:Haitao Liu of Boise ID (US)]]

==MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240251563 titled 'MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND WRAPPED DATA LINE STRUCTURE

The patent application describes apparatuses and methods for forming transistors with charge storage structures. One apparatus includes a first transistor with a first channel region and a separate charge storage structure, a second transistor with a channel region formed over the charge storage structure, and a data line connecting the two channel regions.

* First transistor with a first channel region and a charge storage structure
* Second transistor with a channel region over the charge storage structure
* Data line connecting the two channel regions
* Dielectric material separating the data line from the first channel region

Potential Applications:
- Memory devices
- Integrated circuits
- Semiconductor technology

Problems Solved:
- Enhanced data storage capabilities
- Improved transistor performance
- Increased efficiency in electronic devices

Benefits:
- Higher data storage capacity
- Faster data processing speeds
- Enhanced overall device performance

Commercial Applications:
Title: "Advanced Memory Technology for Next-Generation Electronics"
This technology could be used in the development of high-speed memory devices for consumer electronics, data storage systems, and advanced computing applications. The market implications include improved data processing capabilities, increased storage capacities, and enhanced device performance.

Questions about the technology:
1. How does the separation of the charge storage structure from the channel regions improve transistor performance?
2. What are the potential limitations of implementing this technology in current semiconductor devices?


==Original Abstract Submitted==

some embodiments include apparatuses and methods forming the apparatuses. one of the apparatuses includes a first transistor including a first channel region, and a charge storage structure separated from the first channel region; a second transistor including a second channel region formed over the charge storage structure; and a data line formed over and contacting the first channel region and the second channel region, the data line including a portion adjacent the first channel region and separated from the first channel region by a dielectric material.



[[Category:H10B43/50]]
[[Category:H01L29/10]]
[[Category:H01L29/423]]
[[Category:CPC_H10B43/50]]