View source for Micron technology, inc. (20240249772). ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES simplified abstract

=ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Yu-Chung Lien of San Jose CA (US)|Yu-Chung Lien of San Jose CA (US)]][[Category:Yu-Chung Lien of San Jose CA (US)]]

[[:Category:Zhenming Zhou of San Jose CA (US)|Zhenming Zhou of San Jose CA (US)]][[Category:Zhenming Zhou of San Jose CA (US)]]

==ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240249772 titled 'ELONGATED CAPACITORS IN 3D NAND MEMORY DEVICES

The semiconductor device described in the abstract includes a substrate of semiconductor material with multiple stacks of memory cells within it. Each stack consists of a conductive string connecting memory cells to a bitline, with each memory cell located at the intersection of the conductive string and a wordline. Additionally, a capacitor with a cylindrical body is placed between two adjacent stacks of memory cells, featuring an inner conductive layer and an outer conductive layer separated by a dielectric layer. A power supply line is connected to one end of the capacitor at the base of the cylindrical body.

* The device includes multiple stacks of memory cells connected to bitlines and wordlines.
* Capacitors with cylindrical bodies and inner/outer conductive layers are placed between memory cell stacks.
* A power supply line is connected to the capacitor at the base of the cylindrical body.

Potential Applications:
- Memory storage devices
- Semiconductor manufacturing
- Electronic devices requiring high-density memory storage

Problems Solved:
- Increased memory cell density
- Improved data storage and retrieval efficiency
- Enhanced performance of electronic devices

Benefits:
- Higher memory capacity
- Faster data processing speeds
- More efficient power management

Commercial Applications:
Title: High-Density Memory Semiconductor Devices
This technology can be utilized in the production of high-capacity memory storage devices for various electronic applications, including smartphones, computers, and servers. The increased memory density and improved performance can lead to more efficient and powerful electronic devices in the market.

Questions about the technology:
1. How does the capacitor design contribute to the overall performance of the semiconductor device?
2. What are the specific advantages of using conductive strings to connect memory cells in the device?


==Original Abstract Submitted==

a semiconductor device can include a substrate of semiconductor material and multiple stacks of memory cells disposed within the substrate. each of the stacks can include a conductive string that connects memory cells to a bitline where each memory cell is located at an intersection of the conductive string and a wordline. the device can also include capacitor having a cylindrical body disposed between two adjacent stacks of memory cells where the capacitor includes an inner conductive layer and an outer conductive layer at least partially surrounding the inner conductive layer, where the inner conductive layer and the outer conductive layer are separated by a dielectric layer. the device can further include a power supply line conductively connected to an end of the capacitor at a base of the cylindrical body.



[[Category:G11C16/04]]
[[Category:G11C5/06]]
[[Category:G11C16/30]]
[[Category:CPC_G11C16/0483]]