View source for Micron technology, inc. (20240206190). An Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, And Method Used In Forming An Array Of Capacitors simplified abstract

=An Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, And Method Used In Forming An Array Of Capacitors=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Marcello Mariani of Milano (IT)|Marcello Mariani of Milano (IT)]][[Category:Marcello Mariani of Milano (IT)]]

[[:Category:Giorgio Servalli of Fara Gera D'Adda (IT)|Giorgio Servalli of Fara Gera D'Adda (IT)]][[Category:Giorgio Servalli of Fara Gera D'Adda (IT)]]

==An Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, And Method Used In Forming An Array Of Capacitors - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240206190 titled 'An Array Of Capacitors, An Array Of Memory Cells, Method Used In Forming An Array Of Memory Cells, And Method Used In Forming An Array Of Capacitors

==Simplified Explanation==
The method described in the patent application involves forming an array of capacitors by creating walls in a specific pattern and composition, then growing conductive material to create capacitor electrodes.

* First and second walls are formed in different directions, with different materials stacked on top of each other.
* The second material is removed from the second walls to create elongated beams suspended between the first walls.
* Third walls are formed with a different material that covers the beams.
* Conductive material is grown selectively over the first and second materials to form capacitor electrodes.
* The third walls are removed, and a capacitor insulator is formed over the electrodes.
* Second capacitor electrodes are then created to complete the capacitors.

==Key Features and Innovation==
* Formation of walls with different materials stacked on top of each other.
* Creation of suspended beams between walls.
* Selective growth of conductive material to form capacitor electrodes.
* Use of different materials for walls and insulators.
* Common second capacitor electrodes for multiple capacitors.

==Potential Applications==
This technology can be used in various electronic devices requiring capacitors, such as integrated circuits, memory modules, and power supplies.

==Problems Solved==
* Efficient formation of capacitors in a compact space.
* Improved performance and reliability of capacitors.
* Simplified manufacturing process for capacitor arrays.

==Benefits==
* Higher capacitance density.
* Enhanced electrical performance.
* Increased reliability and longevity of capacitors.

==Commercial Applications==
* This technology can be applied in the semiconductor industry for the production of advanced electronic devices with improved capacitor functionality. It can also benefit manufacturers of consumer electronics, telecommunications equipment, and automotive electronics.

==Questions about the Technology==
===How does the selective growth of conductive material improve the performance of the capacitors?===
The selective growth ensures precise electrode formation, leading to better electrical properties and overall capacitor efficiency.

===What are the potential cost-saving benefits of using this method for capacitor production?===
By streamlining the manufacturing process and reducing material waste, this method can potentially lower production costs and increase overall profitability for manufacturers.


==Original Abstract Submitted==

a method used in forming an array of capacitors comprises forming first walls along a column direction and second walls along a row direction. the first and second walls individually comprise a first material directly above a second material. the first and second materials are of different compositions relative one another. all of the second material is removed from being directly under the first material in the second walls to form beams that are elongated along the row direction and are suspended between immediately-adjacent of the first walls and to leave the second material directly under the first material in the first walls. third walls are formed along the row direction. the third walls comprise third material that is of different composition from those of the first and second materials. the third material of individual of the third walls circumferentially-covers the beams. conductive material is grown over the first and second materials selectively relative to the third material. the selectively-grown conductive material is vertically-along sidewalls of the first walls and comprising first capacitor electrodes. the third walls are removed after the selectively growing. after removing the third walls, a capacitor insulator is formed over the first capacitor electrodes and that circumferentially-covers the beams. second capacitor electrodes are formed over the capacitor insulator to form a plurality of capacitors that individually comprise one of the first capacitor electrodes, the capacitor insulator, and one of the second capacitor electrodes. the second capacitor electrodes are common to multiple of the capacitors. other embodiments, including structure, are disclosed.



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