View source for Micron technology, inc. (20240203791). Integrated Circuitry, A Memory Array Comprising Strings Of Memory Cells, A Method Used In Forming A Conductive Via, A Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract

=Integrated Circuitry, A Memory Array Comprising Strings Of Memory Cells, A Method Used In Forming A Conductive Via, A Method Used In Forming A Memory Array Comprising Strings Of Memory Cells=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:John D. Hopkins of Meridian ID (US)|John D. Hopkins of Meridian ID (US)]][[Category:John D. Hopkins of Meridian ID (US)]]

[[:Category:Shuangqiang Luo of Boise ID (US)|Shuangqiang Luo of Boise ID (US)]][[Category:Shuangqiang Luo of Boise ID (US)]]

[[:Category:Alyssa N. Scarbrough of Boise ID (US)|Alyssa N. Scarbrough of Boise ID (US)]][[Category:Alyssa N. Scarbrough of Boise ID (US)]]

==Integrated Circuitry, A Memory Array Comprising Strings Of Memory Cells, A Method Used In Forming A Conductive Via, A Method Used In Forming A Memory Array Comprising Strings Of Memory Cells - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240203791 titled 'Integrated Circuitry, A Memory Array Comprising Strings Of Memory Cells, A Method Used In Forming A Conductive Via, A Method Used In Forming A Memory Array Comprising Strings Of Memory Cells

The integrated circuitry described in the patent application includes vertical conductive vias that are in direct contact with conductor material of islands. These islands consist of multiple different composition materials above the conductor material and may also include a top material that extends laterally outward beyond the edges of the material below it.

Key Features and Innovation:
* Integrated circuitry with vertical conductive vias in direct contact with conductor material
* Islands made of multiple different composition materials, including a top material extending laterally outward
* Unique design of islands with varying composition materials for improved performance

Potential Applications:
This technology could be used in various electronic devices and systems that require efficient and reliable integrated circuitry, such as smartphones, computers, and IoT devices.

Problems Solved:
* Improved connectivity and signal transmission within integrated circuits
* Enhanced performance and reliability of electronic devices
* Efficient use of space and materials in circuit design

Benefits:
* Increased functionality and performance of electronic devices
* Enhanced reliability and durability of integrated circuitry
* Potential cost savings in circuit design and manufacturing processes

Commercial Applications:
This technology has the potential to revolutionize the electronics industry by offering more efficient and reliable integrated circuitry for a wide range of consumer and industrial applications. Companies in the semiconductor and electronics manufacturing sectors could benefit from implementing this innovative technology.

Questions about the technology:
1. How does the design of islands with multiple composition materials improve the performance of integrated circuitry?
2. What are the potential challenges in implementing this technology in mass production?


==Original Abstract Submitted==

integrated circuitry comprises vertical conductive vias individually having a lower portion thereof that is directly against conductor material of islands. the islands comprise multiple different composition materials directly above the conductor material. apart from the conductive vias, the islands individually comprise at least one of (a), (b), or (c), where: (a): a top material that is of different composition from all material that is vertically between the top material and the conductor material; (b): the top material having its top surface in a vertical cross-section extending laterally-outward beyond two opposing laterally-outermost edges of a top surface of the material that is immediately directly below the top material; and (c): is of different composition from that of an upper portion of the conductor material and including a portion thereof that is elevationally coincident with the conductor material or that is directly against the conductor material. other embodiments, including methods, are disclosed.



[[Category:H01L21/768]]
[[Category:H01L23/535]]
[[Category:H10B41/27]]
[[Category:H10B43/27]]
[[Category:CPC_H01L21/76895]]