View source for Micron technology, inc. (20240186234). Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells simplified abstract

=Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Sanh D. Tang of Boise ID (US)|Sanh D. Tang of Boise ID (US)]][[Category:Sanh D. Tang of Boise ID (US)]]

[[:Category:Roger W. Lindsay of Boise ID (US)|Roger W. Lindsay of Boise ID (US)]][[Category:Roger W. Lindsay of Boise ID (US)]]

[[:Category:Krishna K. Parat of Palo Alto CA (US)|Krishna K. Parat of Palo Alto CA (US)]][[Category:Krishna K. Parat of Palo Alto CA (US)]]

==Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240186234 titled 'Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells

Abstract: A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The features extend horizontally through a primary portion of the stack with some extending farther in the horizontal direction in an end portion. Operative structures and dummy structures are formed vertically through the features in different portions. Openings are formed through the features to create horizontally elongated and vertically overlapping lines. Sacrificial material between the lines is partially removed laterally between the openings.

*Simplified Explanation:
The method involves creating circuitry components by stacking features that extend horizontally and vertically, forming operative and dummy structures, and removing sacrificial material between lines formed through the features.

*Key Features and Innovation:
- Formation of horizontally extending and vertically overlapping features
- Creation of operative and dummy structures vertically through the features
- Removal of sacrificial material between lines formed through the features

*Potential Applications:
- Semiconductor manufacturing
- Printed circuit board production
- Microelectronics fabrication

*Problems Solved:
- Efficient formation of circuitry components
- Precise alignment of features in the stack
- Reduction of material wastage during manufacturing

*Benefits:
- Enhanced precision in circuitry component formation
- Improved efficiency in manufacturing processes
- Cost-effective production of circuitry components

*Commercial Applications:
Title: Advanced Circuitry Component Manufacturing Method
This technology can be utilized in the semiconductor industry for producing high-quality circuitry components with improved efficiency and precision. It can also find applications in the production of printed circuit boards and various microelectronics.

*Prior Art:
No specific prior art information provided.

*Frequently Updated Research:
No information on frequently updated research related to this technology.

Questions about Circuitry Component Formation:
1. How does the method ensure precise alignment of features in the stack?
The method involves forming vertically overlapping features, which helps in aligning the operative and dummy structures accurately.

2. What are the potential cost savings associated with using this manufacturing method?
By efficiently utilizing materials and reducing wastage, this method can lead to significant cost savings in circuitry component production.


==Original Abstract Submitted==

a method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. the features extend horizontally though a primary portion of the stack with at least some of the features extending farther in the horizontal direction in an end portion. operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. the lines individually extend laterally about sides of vertically extending portions of both the operative structures and the dummy structures. sacrificial material that is elevationally between the lines is at least partially removed in the primary and end portions laterally between the openings. other aspects and implementations are disclosed.



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