View source for Micron technology, inc. (20240177744). APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY simplified abstract

=APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY=


==Organization Name==

[[:Category:micron technology, inc.|micron technology, inc.]]


[[Category:micron technology, inc.]]

==Inventor(s)==

[[:Category:Hirokazu Ato of Sagamihara (JP)|Hirokazu Ato of Sagamihara (JP)]][[Category:Hirokazu Ato of Sagamihara (JP)]]

==APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240177744 titled 'APPARATUSES AND METHODS INCLUDING CIRCUITS IN GAP REGIONS OF A MEMORY ARRAY

==Simplified Explanation==

The patent application describes apparatuses and methods for memory arrays with circuits in gap regions. An example apparatus includes first and second memory mats adjacent along a first direction, with a region between them. The region contains a local input/output (LIO) line extending along a second direction perpendicular to the first direction, along with a LIO driver and a LIO precharge circuit coupled to the LIO line. The LIO driver drives the LIO line to data voltage levels based on data read from or written to memory cells, while the LIO precharge circuit provides a LIO precharge voltage to the LIO lines.

* Memory array with circuits in gap regions
* LIO line extending through the region
* LIO driver and LIO precharge circuit for driving and precharging the LIO line

== Potential Applications ==
This technology could be applied in various memory storage devices, such as solid-state drives, to improve data transfer speeds and efficiency.

== Problems Solved ==
This technology helps in enhancing the performance and reliability of memory arrays by efficiently managing data transfer and precharging operations.

== Benefits ==
The benefits of this technology include faster data transfer speeds, improved data storage efficiency, and enhanced reliability of memory arrays.

== Potential Commercial Applications ==
Potential commercial applications of this technology include the manufacturing of high-speed and reliable memory storage devices for consumer electronics, data centers, and other computing systems.

== Possible Prior Art ==
One possible prior art could be memory arrays with separate precharge circuits for managing data transfer operations efficiently.

=== Unanswered Questions ===

=== How does this technology compare to existing memory array designs in terms of data transfer speeds and efficiency? ===
This article does not provide a direct comparison with existing memory array designs to assess the performance improvements offered by this technology.

=== What are the potential challenges in implementing this technology on a large scale in commercial memory storage devices? ===
The article does not address the potential challenges or limitations that may arise when implementing this technology on a large scale in commercial memory storage devices.


==Original Abstract Submitted==

apparatuses and methods including circuits in gap regions of a memory array are disclosed. an example apparatus includes first and second memory mats adjacent along a first direction, and further includes a region between the first and second memory mats along the first direction. the region includes a local input/output (lio) line that extends along a second direction perpendicular to the first direction through the region, and further includes a lio driver and a lio precharge circuit coupled to the lio line. the lio driver is configured to drive the lio line to data voltage levels based on data read from memory cells or based on data to be written to memory cells, and the lio precharge circuit is configured to provide a lio precharge voltage to the lio lines.



[[Category:G11C7/08]]
[[Category:G11C7/02]]
[[Category:G11C7/10]]