View source for Kioxia corporation (20240421008). SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD

=SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD=


==Organization Name==

[[:Category:kioxia corporation|kioxia corporation]]


[[Category:kioxia corporation]]

==Inventor(s)==

[[:Category:Shunsuke Okada of Suzuka (JP)|Shunsuke Okada of Suzuka (JP)]][[Category:Shunsuke Okada of Suzuka (JP)]]

[[:Category:Yoshifumi Nishio of Kuwana (JP)|Yoshifumi Nishio of Kuwana (JP)]][[Category:Yoshifumi Nishio of Kuwana (JP)]]

==SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD==


This abstract first appeared for US patent application 20240421008 titled 'SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD




==Original Abstract Submitted==

a semiconductor wafer temperature measurement method according to the present embodiment includes introducing an impurity into a first surface of a wafer to form an amorphous layer on a side of the first surface of the wafer. the present temperature measurement method includes measuring a first film thickness that is the film thickness of the amorphous layer. the present temperature measurement method includes thermally treating the wafer to recrystallize part of the amorphous layer. the present temperature measurement method includes measuring a second film thickness that is the film thickness of the amorphous layer after the thermal treatment. the present temperature measurement method includes measuring the temperature of the wafer at the thermal treatment based on a film thickness difference between the first film thickness and the second film thickness.



[[Category:H01L21/66]]
[[Category:G01K11/00]]
[[Category:H01L21/02]]
[[Category:H01L21/265]]
[[Category:CPC_H01L22/20]]