View source for Kioxia corporation (20240315143). MAGNETIC MEMORY DEVICE simplified abstract

=MAGNETIC MEMORY DEVICE=


==Organization Name==

[[:Category:kioxia corporation|kioxia corporation]]


[[Category:kioxia corporation]]

==Inventor(s)==

[[:Category:Hyung-Woo Ahn of Seongnam-si Gyeonggi-do (KR)|Hyung-Woo Ahn of Seongnam-si Gyeonggi-do (KR)]][[Category:Hyung-Woo Ahn of Seongnam-si Gyeonggi-do (KR)]]

[[:Category:Tadaaki Oikawa of Seoul (KR)|Tadaaki Oikawa of Seoul (KR)]][[Category:Tadaaki Oikawa of Seoul (KR)]]

[[:Category:Taiga Isoda of Tokyo (JP)|Taiga Isoda of Tokyo (JP)]][[Category:Taiga Isoda of Tokyo (JP)]]

[[:Category:Kenji Fukuda of Seoul (KR)|Kenji Fukuda of Seoul (KR)]][[Category:Kenji Fukuda of Seoul (KR)]]

[[:Category:Ku Youl Jung of Icheon-si (KR)|Ku Youl Jung of Icheon-si (KR)]][[Category:Ku Youl Jung of Icheon-si (KR)]]

==MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240315143 titled 'MAGNETIC MEMORY DEVICE

'''Simplified Explanation:'''
The patent application describes a magnetic memory device with a memory cell that includes a switching element, a magnetoresistance effect element, and an electrode. The electrode consists of a first non-magnetic layer in contact with the switching element and a second non-magnetic layer with an amorphous structure containing a metal oxide or metal nitride.

* The memory cell in the magnetic memory device includes a switching element, a magnetoresistance effect element, and an electrode.
* The electrode is composed of a first non-magnetic layer in contact with the switching element.
* A second non-magnetic layer with an amorphous structure and containing a metal oxide or metal nitride is provided on the opposite side of the first non-magnetic layer.

'''Potential Applications:'''
1. Data storage devices
2. Computer memory systems
3. Magnetic sensors

'''Problems Solved:'''
1. Enhanced performance and reliability of magnetic memory devices
2. Improved data storage capabilities
3. Increased efficiency in memory systems

'''Benefits:'''
1. Higher data storage density
2. Faster data access speeds
3. Improved overall performance of memory devices

'''Commercial Applications:'''
The technology can be utilized in the development of advanced data storage solutions for various industries, including electronics, telecommunications, and computing.

'''Questions about Magnetic Memory Devices:'''
1. How does the amorphous structure of the second non-magnetic layer contribute to the performance of the memory cell?
2. What are the potential challenges in implementing this technology on a larger scale?

'''Frequently Updated Research:'''
Researchers are continuously exploring new materials and structures to further enhance the efficiency and capabilities of magnetic memory devices. Stay updated on the latest advancements in this field for potential future applications.


==Original Abstract Submitted==

according to one embodiment, a magnetic memory device includes a memory cell. the memory cell includes a switching element, a magnetoresistance effect element, and an electrode that electrically couples the switching element to the magnetoresistance effect element. the electrode includes: a first non-magnetic layer being in contact with the switching element; and a second non-magnetic layer provided on a side opposite to a side on which the switching element is provided with respect to the first non-magnetic layer. the second non-magnetic layer has an amorphous structure and contains a metal oxide or a metal nitride.



[[Category:H10N50/10]]
[[Category:G11C11/16]]
[[Category:H10B61/00]]
[[Category:H10N50/85]]
[[Category:CPC_H10N50/10]]