View source for Kioxia corporation (20240315007). SEMICONDUCTOR DEVICE simplified abstract

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:kioxia corporation|kioxia corporation]]


[[Category:kioxia corporation]]

==Inventor(s)==

[[:Category:Kotaro Noda of Yokkaichi Mie (JP)|Kotaro Noda of Yokkaichi Mie (JP)]][[Category:Kotaro Noda of Yokkaichi Mie (JP)]]

[[:Category:Takahiro Fujii of Nagoya Aichi (JP)|Takahiro Fujii of Nagoya Aichi (JP)]][[Category:Takahiro Fujii of Nagoya Aichi (JP)]]

[[:Category:Takanori Akita of Yokkaichi Mie (JP)|Takanori Akita of Yokkaichi Mie (JP)]][[Category:Takanori Akita of Yokkaichi Mie (JP)]]

[[:Category:Mutsumi Okajima of Yokkaichi Mie (JP)|Mutsumi Okajima of Yokkaichi Mie (JP)]][[Category:Mutsumi Okajima of Yokkaichi Mie (JP)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240315007 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract consists of multiple layers and components that work together to enhance its functionality and performance.

* The device includes a first oxide semiconductor layer, a first wiring, a first insulating film, a first conductor, a second wiring, a first insulating layer, and a second insulating layer.
* The first oxide semiconductor layer extends in one direction, while the first wiring extends in a different direction, intersecting the first direction.
* The first insulating film separates the first wiring from the first oxide semiconductor layer to prevent interference.
* A first conductor is placed on the first oxide semiconductor layer, followed by a second wiring that extends in a direction different from the first and second directions.
* The first insulating layer is in contact with the side surface of the second wiring, and a second insulating layer with lower oxygen permeability than the first insulating layer is provided on top.

Potential Applications:
- This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications.
- It can improve the efficiency and performance of integrated circuits and microprocessors.

Problems Solved:
- The technology addresses the need for better insulation and protection of semiconductor components.
- It enhances the reliability and durability of semiconductor devices.

Benefits:
- Improved functionality and performance of semiconductor devices.
- Enhanced insulation and protection of components.
- Increased reliability and durability of electronic devices.

Commercial Applications:
Title: Advanced Semiconductor Device Technology for Enhanced Performance
This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be utilized in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical imaging equipment.

Questions about Semiconductor Device Technology:
1. How does the second insulating layer with lower oxygen permeability contribute to the overall performance of the semiconductor device?
2. What are the specific advantages of using a first oxide semiconductor layer in this technology?


==Original Abstract Submitted==

a semiconductor device includes a first oxide semiconductor layer extending in a first direction, a first wiring extending in a second direction that intersects the first direction and surrounding the first oxide semiconductor layer, a first insulating film provided between the first wiring and the first oxide semiconductor layer, a first conductor provided on the first oxide semiconductor layer, a second wiring provided on the first conductor and extending in a third direction that intersects each of the first direction and the second direction, a first insulating layer in contact with a side surface of the second wiring, and a second insulating layer provided on the first insulating layer and having oxygen permeability lower than oxygen permeability of the first insulating layer.



[[Category:H10B12/00]]
[[Category:CPC_H10B12/33]]