View source for Kabushiki kaisha toshiba (20250105067). SEMICONDUCTOR DEVICE

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:kabushiki kaisha toshiba|kabushiki kaisha toshiba]]


[[Category:kabushiki kaisha toshiba]]

==Inventor(s)==

[[:Category:Taira Tabakoya of Fuchu Tokyo JP|Taira Tabakoya of Fuchu Tokyo JP]][[Category:Taira Tabakoya of Fuchu Tokyo JP]]

[[:Category:Toshihiro Tsujimura of Ota Tokyo JP|Toshihiro Tsujimura of Ota Tokyo JP]][[Category:Toshihiro Tsujimura of Ota Tokyo JP]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 20250105067 titled 'SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

a semiconductor device includes a first substrate, a second substrate, a first semiconductor element, a second semiconductor element, a connection conductor, a connection conductor, and a sealing part. the first substrate includes a first surface, a second surface, a first insulating substrate, and a first conductive layer. the second substrate includes a third surface, a fourth surface, a second insulating substrate, and a second conductive layer. the first semiconductor element includes a first semiconductor layer, a first electrode, a second electrode, and a first control electrode. the second semiconductor element includes a second semiconductor layer, a third electrode, a fourth electrode, and a second control electrode. the connection conductor electrically connects the first and fourth electrodes. the sealing part covers a portion of the first substrate, a portion of the second substrate, the first semiconductor element, and the second semiconductor element.



[[Category:H01L23/04]]
[[Category:H01L23/00]]
[[Category:H01L23/498]]
[[Category:CPC_H01L23/04]]