View source for International business machines corporation (20240213243). FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE simplified abstract

=FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE=


==Organization Name==

[[:Category:international business machines corporation|international business machines corporation]]


[[Category:international business machines corporation]]

==Inventor(s)==

[[:Category:Shravana Kumar Katakam of Lehi UT (US)|Shravana Kumar Katakam of Lehi UT (US)]][[Category:Shravana Kumar Katakam of Lehi UT (US)]]

[[:Category:Tao Li of Slingerlands NY (US)|Tao Li of Slingerlands NY (US)]][[Category:Tao Li of Slingerlands NY (US)]]

[[:Category:Indira Seshadri of Niskayuna NY (US)|Indira Seshadri of Niskayuna NY (US)]][[Category:Indira Seshadri of Niskayuna NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

==FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240213243 titled 'FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE

The abstract of the patent application describes a microelectronic device with a unique structure involving two source and drain structures, each with a conductive contact and a separating layer between them.

* The device includes a first source and drain structure adjacent to a second source and drain structure.
* A first conductive contact is in contact with the top and side surfaces of the first source and drain structure.
* A second conductive contact is in contact with the top and side surfaces of the second source and drain structure.
* The second conductive contact has a via extension to connect to a backside component.
* A separating layer is located between the first and second conductive contacts.
* The first sidewall of the separating layer is flush with the first conductive contact.
* The second sidewall of the separating layer is flush with the second conductive contact.

Potential Applications:
- This technology can be used in the development of advanced microelectronic devices for various industries such as telecommunications, computing, and consumer electronics.

Problems Solved:
- This innovation addresses the need for improved connectivity and efficiency in microelectronic devices.

Benefits:
- Enhanced performance and reliability of microelectronic devices.
- Improved integration of components for compact designs.
- Increased functionality and versatility in electronic applications.

Commercial Applications:
- This technology could be applied in the production of high-performance integrated circuits, sensors, and other electronic devices, leading to advancements in technology and potential market growth.

Questions about the technology:
1. How does the separating layer contribute to the overall functionality of the microelectronic device?
- The separating layer helps to prevent interference between the two source and drain structures, ensuring proper operation and performance.

2. What advantages does the via extension in the second conductive contact provide in terms of connectivity?
- The via extension allows for a direct connection to a backside component, enabling more efficient signal transmission and overall device functionality.


==Original Abstract Submitted==

a microelectronic device includes a first source and drain structure adjacent to a second source and drain structure. a first conductive contact is in contact with a top surface and side surface of the first source and drain structure. a second conductive contact is in contact with a top surface and side surface of the second source and drain structure. the second conductive contact includes a via extension to connect to a backside component. a separating layer is located between the first conductive contact and the second conductive contact. a first sidewall of the separating layer is flush with the first conductive contact. a second sidewall of the separating layer is flush with the second conductive contact.



[[Category:H01L27/092]]
[[Category:H01L23/50]]
[[Category:H01L23/522]]
[[Category:H01L29/08]]
[[Category:H01L29/66]]
[[Category:CPC_H01L27/092]]