View source for Intel corporation (20240332403). STACKED TRANSISTORS simplified abstract

=STACKED TRANSISTORS=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Patrick Morrow of Portland OR (US)|Patrick Morrow of Portland OR (US)]][[Category:Patrick Morrow of Portland OR (US)]]

[[:Category:Rishabh Mehandru of Portland OR (US)|Rishabh Mehandru of Portland OR (US)]][[Category:Rishabh Mehandru of Portland OR (US)]]

[[:Category:Aaron D. Lilak of Beaverton OR (US)|Aaron D. Lilak of Beaverton OR (US)]][[Category:Aaron D. Lilak of Beaverton OR (US)]]

==STACKED TRANSISTORS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240332403 titled 'STACKED TRANSISTORS

'''Simplified Explanation''': The patent application describes a process where an interconnect layer is bonded to a substrate, with subsequent layers and openings formed to expose and create contact regions on specific portions of the device layer.

'''Key Features and Innovation''':
* Deposition of interconnect layer on device layers on substrates
* Formation of insulating layers and openings to expose device layers
* Creation of contact regions on exposed device layers

'''Potential Applications''': 
This technology could be applied in semiconductor manufacturing, integrated circuit fabrication, and microelectronics industries.

'''Problems Solved''': 
This technology addresses the need for precise and controlled contact regions on device layers in semiconductor devices.

'''Benefits''': 
The benefits of this technology include improved performance, reliability, and efficiency of semiconductor devices.

'''Commercial Applications''': 
Potential commercial applications include the production of advanced electronic devices, such as smartphones, computers, and other consumer electronics.

'''Prior Art''': 
Readers can explore prior art related to this technology in the field of semiconductor device fabrication, interconnect technologies, and integrated circuit design.

'''Frequently Updated Research''': 
Stay updated on the latest advancements in semiconductor manufacturing, device integration, and interconnect technologies for potential improvements in this field.

'''Questions about the Technology''':
1. What are the specific materials used in the interconnect layer bonding process?
2. How does this technology compare to traditional methods of creating contact regions on device layers?


==Original Abstract Submitted==

a first interconnect layer is bonded to a first substrate. the first interconnect layer is deposited on a first device layer on a second device layer on a second substrate. the second device layer is revealed from the second substrate side. a first insulating layer is deposited on the revealed second device layer. a first opening is formed in the first insulating layer to expose a first portion of the second device layer. a contact region is formed on the exposed first portion of the second device layer.



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