View source for Intel corporation (20240321738). BRIDGING CONTACT STRUCTURES simplified abstract

=BRIDGING CONTACT STRUCTURES=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Leonard P. Guler of Hillsboro OR (US)|Leonard P. Guler of Hillsboro OR (US)]][[Category:Leonard P. Guler of Hillsboro OR (US)]]

[[:Category:Prabhjot Kaur Luthra of Portland OR (US)|Prabhjot Kaur Luthra of Portland OR (US)]][[Category:Prabhjot Kaur Luthra of Portland OR (US)]]

[[:Category:Nidhi Khandelwal of Portland OR (US)|Nidhi Khandelwal of Portland OR (US)]][[Category:Nidhi Khandelwal of Portland OR (US)]]

[[:Category:Marie T. Conte of Hillsboro OR (US)|Marie T. Conte of Hillsboro OR (US)]][[Category:Marie T. Conte of Hillsboro OR (US)]]

[[:Category:Saurabh Acharya of Hillsboro OR (US)|Saurabh Acharya of Hillsboro OR (US)]][[Category:Saurabh Acharya of Hillsboro OR (US)]]

[[:Category:Shengsi Liu of Portland OR (US)|Shengsi Liu of Portland OR (US)]][[Category:Shengsi Liu of Portland OR (US)]]

[[:Category:Gary Allen of Portland OR (US)|Gary Allen of Portland OR (US)]][[Category:Gary Allen of Portland OR (US)]]

[[:Category:Clifford J. Engel of Hillsboro OR (US)|Clifford J. Engel of Hillsboro OR (US)]][[Category:Clifford J. Engel of Hillsboro OR (US)]]

[[:Category:Charles H. Wallace of Portland OR (US)|Charles H. Wallace of Portland OR (US)]][[Category:Charles H. Wallace of Portland OR (US)]]

==BRIDGING CONTACT STRUCTURES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240321738 titled 'BRIDGING CONTACT STRUCTURES

'''Simplified Explanation:'''
The patent application discusses techniques for forming an integrated circuit with a bridging contact structure that connects source/drain contacts to an adjacent gate electrode within the same device layer.

'''Key Features and Innovation:'''
* Gate cut structure separates source/drain regions and gate structures of neighboring semiconductor devices.
* Contacts are formed over the source/drain regions of neighboring devices on opposite sides of the gate cut.
* Conductive bridges are used to connect the source/drain contacts and the gate structures, replacing portions of the gate cut and dielectric barriers.

'''Potential Applications:'''
This technology can be applied in the semiconductor industry for the manufacturing of integrated circuits with improved connectivity and efficiency.

'''Problems Solved:'''
The technology addresses the challenge of efficiently connecting source/drain contacts to gate electrodes in integrated circuits.

'''Benefits:'''
* Enhanced connectivity between source/drain contacts and gate electrodes.
* Improved performance and efficiency of integrated circuits.
* Simplified manufacturing processes for semiconductor devices.

'''Commercial Applications:'''
The technology has potential commercial applications in the semiconductor industry for the production of advanced integrated circuits with optimized connectivity.

'''Prior Art:'''
Readers can explore prior art related to bridging contact structures in integrated circuits by researching semiconductor device fabrication techniques and materials.

'''Frequently Updated Research:'''
Stay updated on the latest advancements in semiconductor manufacturing processes and integrated circuit design to understand the evolving landscape of bridging contact structures.

'''Questions about Bridging Contact Structures:'''
1. How do bridging contact structures improve the performance of integrated circuits?
2. What are the key challenges in implementing bridging contact structures in semiconductor devices?


==Original Abstract Submitted==

techniques to form an integrated circuit having a bridging contact structure. a bridging contact structure may, for example, bridge between source/drain contacts and to an adjacent gate electrode within the same device layer. in an example, a gate cut structure extends in a first direction to separate the source or drain regions and gate structures of neighboring semiconductor devices. contacts may be formed over the source or drain regions of the neighboring devices on opposite sides of the gate cut along a second direction orthogonal to the first direction. a portion of the gate cut is replaced with a first conductive bridge between the source or drain contacts. a portion of one or more dielectric barriers between one of the source or drain contacts and an adjacent gate electrode is replaced with a second conductive bridge in the first direction between the source or drain contact and the gate structure.



[[Category:H01L23/528]]
[[Category:H01L27/092]]
[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]
[[Category:H01L29/778]]
[[Category:CPC_H01L23/5283]]