View source for Intel corporation (20240213118). GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS simplified abstract

=GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Han Wui Then of Portland OR (US)|Han Wui Then of Portland OR (US)]][[Category:Han Wui Then of Portland OR (US)]]

[[:Category:Marko Radosavljevic of Portland OR (US)|Marko Radosavljevic of Portland OR (US)]][[Category:Marko Radosavljevic of Portland OR (US)]]

[[:Category:Heli Chetanbhai Vora of Hillsboro OR (US)|Heli Chetanbhai Vora of Hillsboro OR (US)]][[Category:Heli Chetanbhai Vora of Hillsboro OR (US)]]

[[:Category:Samuel James Bader of Hillsboro OR (US)|Samuel James Bader of Hillsboro OR (US)]][[Category:Samuel James Bader of Hillsboro OR (US)]]

[[:Category:Ahmad Zubair of Hillsboro OR (US)|Ahmad Zubair of Hillsboro OR (US)]][[Category:Ahmad Zubair of Hillsboro OR (US)]]

[[:Category:Thomas Hoff of Hillsboro OR (US)|Thomas Hoff of Hillsboro OR (US)]][[Category:Thomas Hoff of Hillsboro OR (US)]]

[[:Category:Pratik Koirala of Portland OR (US)|Pratik Koirala of Portland OR (US)]][[Category:Pratik Koirala of Portland OR (US)]]

[[:Category:Michael S. Beumer of Portland OR (US)|Michael S. Beumer of Portland OR (US)]][[Category:Michael S. Beumer of Portland OR (US)]]

[[:Category:Paul Nordeen of Hillsboro OR (US)|Paul Nordeen of Hillsboro OR (US)]][[Category:Paul Nordeen of Hillsboro OR (US)]]

[[:Category:Nityan Nair of Portland OR (US)|Nityan Nair of Portland OR (US)]][[Category:Nityan Nair of Portland OR (US)]]

==GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240213118 titled 'GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

The abstract describes gallium nitride (GaN) devices with through-silicon vias for integrated circuit technology. In one example, an integrated circuit structure includes a layer of gallium and nitrogen above a silicon substrate, with a backside structure below the silicon substrate containing conductive features and dielectric structures. The structure also features a plurality of through-silicon via power bars with a staggered arrangement, extending through the layer of gallium and nitrogen and the silicon substrate to connect with the conductive features on the backside structure.

* Integrated circuit structure with gallium nitride (GaN) layer and through-silicon vias for power distribution
* Backside structure with conductive features and dielectric structures
* Through-silicon via power bars with staggered arrangement for efficient power delivery
* Tapered portions on through-silicon via power bars for improved connection
* Enhanced power distribution and connectivity in integrated circuits

Potential Applications:
- Power electronics
- High-frequency applications
- RF amplifiers
- LED lighting

Problems Solved:
- Efficient power distribution in integrated circuits
- Improved connectivity between different layers
- Enhanced performance in high-frequency applications

Benefits:
- Higher efficiency in power distribution
- Improved signal integrity
- Enhanced reliability in integrated circuits

Commercial Applications:
Title: "Advanced Power Distribution in Integrated Circuits with GaN Technology"
This technology can be used in various industries such as telecommunications, automotive, and aerospace for high-performance electronic systems.

Questions about GaN devices with through-silicon vias:
1. How does the use of through-silicon vias improve power distribution in integrated circuits?
- Through-silicon vias provide a direct connection between different layers, reducing resistance and improving power delivery efficiency.

2. What are the key advantages of using gallium nitride (GaN) in integrated circuit technology?
- GaN offers high electron mobility, allowing for faster switching speeds and higher power density in electronic devices.


==Original Abstract Submitted==

gallium nitride (gan) devices with through-silicon vias for integrated circuit technology are described. in an example, an integrated circuit structure includes a layer including gallium and nitrogen, the layer including gallium and nitrogen above a silicon substrate. a backside structure is below the silicon substrate and opposite the layer including gallium and nitrogen, the backside structure including conductive features and dielectric structures. the integrated circuit structure also includes a plurality of through-silicon via power bars having a staggered arrangement, individual ones of the through-silicon via power bars extending through the layer including gallium and nitrogen and through the silicon substrate to a corresponding one of the conductive features of the backside structure, and individual ones of the through-silicon via power bars having a tapered portion coupled to an essentially vertical portion.



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