View source for Intel corporation (20240204091). LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES simplified abstract

=LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Heli Vora of Portland OR (US)|Heli Vora of Portland OR (US)]][[Category:Heli Vora of Portland OR (US)]]

[[:Category:Marko Radosavljevic of Portland OR (US)|Marko Radosavljevic of Portland OR (US)]][[Category:Marko Radosavljevic of Portland OR (US)]]

[[:Category:Pratik Koirala of Portland OR (US)|Pratik Koirala of Portland OR (US)]][[Category:Pratik Koirala of Portland OR (US)]]

[[:Category:Han Wui Then of Portland OR (US)|Han Wui Then of Portland OR (US)]][[Category:Han Wui Then of Portland OR (US)]]

[[:Category:Michael Beumer of Portland OR (US)|Michael Beumer of Portland OR (US)]][[Category:Michael Beumer of Portland OR (US)]]

[[:Category:Ahmad Zubair of Hillsboro OR (US)|Ahmad Zubair of Hillsboro OR (US)]][[Category:Ahmad Zubair of Hillsboro OR (US)]]

[[:Category:Samuel Bader of Hillsboro OR (US)|Samuel Bader of Hillsboro OR (US)]][[Category:Samuel Bader of Hillsboro OR (US)]]

==LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240204091 titled 'LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES

The patent application describes devices, transistor structures, systems, and techniques related to low aluminum concentration aluminum gallium nitride interlayers for group III-nitride enhancement mode transistors. The low aluminum concentration aluminum gallium nitride interlayer has a lower aluminum concentration than the polarization layer of the transistor, allowing the polarization layer to induce a two-dimensional electron gas in a semiconductor layer of the transistor. The interlayer can be used as an etch stop layer, a gate liner, or both.

* The patent introduces low aluminum concentration aluminum gallium nitride interlayers for group III-nitride enhancement mode transistors.
* These interlayers have a lower aluminum concentration than the polarization layer, enabling the induction of a two-dimensional electron gas in the semiconductor layer.
* The interlayer can serve as an etch stop layer, a gate liner, or both, enhancing the performance of the transistor.

Potential Applications:
- High-frequency communication systems
- Power amplifiers
- Radar systems

Problems Solved:
- Improving the performance of group III-nitride enhancement mode transistors
- Enhancing the efficiency of semiconductor devices

Benefits:
- Increased transistor performance
- Enhanced electron gas induction
- Improved overall device efficiency

Commercial Applications:
Title: "Advanced Transistor Technology for High-Frequency Communication Systems"
This technology can be utilized in the development of high-performance communication systems, power amplifiers, and radar systems, catering to the growing demand for efficient semiconductor devices in various industries.

Prior Art:
Research on aluminum gallium nitride interlayers in semiconductor devices and transistors.

Frequently Updated Research:
Ongoing studies on the optimization of aluminum gallium nitride interlayers for enhanced transistor performance.

Questions about Low Aluminum Concentration Aluminum Gallium Nitride Interlayers:
1. How does the low aluminum concentration in the interlayer impact the performance of the transistor?
2. What are the potential challenges in implementing these interlayers in semiconductor devices?


==Original Abstract Submitted==

devices, transistor structures, systems, and techniques are described herein related to low aluminum concentration aluminum gallium nitride interlayers for group iii-nitride enhancement mode transistors. the low aluminum concentration aluminum gallium nitride interlayer includes a lower aluminum concentration than a polarization layer of the transistor, such that the polarization layer induces a two-dimensional electron gas in a semiconductor layer of the transistor. the low aluminum concentration aluminum gallium nitride interlayer may be implemented as an etch stop layer, as a gate liner, or both.



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[[Category:H01L21/285]]
[[Category:H01L21/306]]
[[Category:H01L29/20]]
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[[Category:H01L29/66]]
[[Category:CPC_H01L29/7786]]