View source for Intel corporation (20240204059). GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract

=GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Pratik Koirala of Portland OR (US)|Pratik Koirala of Portland OR (US)]][[Category:Pratik Koirala of Portland OR (US)]]

[[:Category:Michael S. Beumer of Portland OR (US)|Michael S. Beumer of Portland OR (US)]][[Category:Michael S. Beumer of Portland OR (US)]]

[[:Category:Marko Radosavljevic of Portland OR (US)|Marko Radosavljevic of Portland OR (US)]][[Category:Marko Radosavljevic of Portland OR (US)]]

[[:Category:Han Wui Then of Portland OR (US)|Han Wui Then of Portland OR (US)]][[Category:Han Wui Then of Portland OR (US)]]

==GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240204059 titled 'GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY

== Simplified Explanation ==
The patent application describes a technology involving gallium nitride (GaN) with interlayers for integrated circuit technology. In simple terms, it involves a structure that includes a layer of gallium and nitrogen with an interlayer that helps confine defects to a lower portion of the layer.

* The integrated circuit structure includes a substrate made of silicon.
* A layer containing gallium and nitrogen is positioned above the substrate.
* The layer with gallium and nitrogen has an interlayer that confines defects to a lower part of the layer.

== Key Features and Innovation ==
* Integration of gallium nitride (GaN) with interlayers for improved performance in integrated circuit technology.
* Interlayer helps confine defects to a lower portion of the layer, enhancing the overall quality of the structure.

== Potential Applications ==
The technology can be applied in various integrated circuit devices, such as power amplifiers, RF devices, and high-frequency applications.

== Problems Solved ==
* Improved quality and performance of integrated circuits by confining defects to specific areas.
* Enhanced reliability and efficiency in integrated circuit technology.

== Benefits ==
* Higher quality and reliability in integrated circuit structures.
* Improved performance and efficiency in various applications.
* Enhanced functionality in power amplifiers and RF devices.

== Commercial Applications ==
* Potential commercial uses include telecommunications, aerospace, and consumer electronics industries.
* Market implications include increased demand for high-performance integrated circuit technology.

== Prior Art ==
Readers can explore prior research on gallium nitride (GaN) technology in integrated circuits to understand the evolution of this field.

== Frequently Updated Research ==
Stay updated on the latest advancements in gallium nitride (GaN) technology for integrated circuits to leverage the most current innovations in the industry.

== Questions about Gallium Nitride (GaN) with Interlayers ==
=== What are the key advantages of using interlayers in gallium nitride (GaN) technology for integrated circuits? ===
Interlayers help confine defects, improving the overall quality and reliability of integrated circuit structures.

=== How does the integration of gallium nitride (GaN) with interlayers impact the performance of RF devices? ===
The integration enhances the efficiency and reliability of RF devices, making them suitable for high-frequency applications.


==Original Abstract Submitted==

gallium nitride (gan) with interlayers for integrated circuit technology is described. in an example, an integrated circuit structure includes a substrate including silicon. a layer including gallium and nitrogen is above the substrate. the layer including gallium and nitrogen has an interlayer therein. the interlayer confines a plurality of defects to a lower portion of the layer including gallium and nitrogen.



[[Category:H01L29/32]]
[[Category:H01L29/20]]
[[Category:H01L29/205]]
[[Category:H01L29/40]]
[[Category:H01L29/778]]
[[Category:CPC_H01L29/32]]