View source for Intel corporation (20240113233). WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract

=WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Leonard P. Guler of Hillsboro OR (US)|Leonard P. Guler of Hillsboro OR (US)]][[Category:Leonard P. Guler of Hillsboro OR (US)]]

[[:Category:Sukru Yemenicioglu of Portland OR (US)|Sukru Yemenicioglu of Portland OR (US)]][[Category:Sukru Yemenicioglu of Portland OR (US)]]

[[:Category:Shengsi Liu of Portland OR (US)|Shengsi Liu of Portland OR (US)]][[Category:Shengsi Liu of Portland OR (US)]]

[[:Category:Shao Ming Koh of Tigard OR (US)|Shao Ming Koh of Tigard OR (US)]][[Category:Shao Ming Koh of Tigard OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

==WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240113233 titled 'WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS

==Simplified Explanation==

The patent application describes a technique for creating a wall within a forkfet transistor structure, isolating two stacks of nanoribbons electrically. 

* The wall is adjacent to a first stack of nanoribbons on one side and a second stack on the other side, isolating them.
* The wall extends beyond the top of the first stack of nanoribbons, ensuring complete isolation.
* The wall isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons.

== Potential Applications ==
This technology could be applied in the development of advanced transistor structures for high-performance electronic devices.

== Problems Solved ==
This innovation solves the problem of electrical interference between different stacks of nanoribbons in a transistor structure.

== Benefits ==
The technology allows for improved performance and efficiency in electronic devices by ensuring proper isolation between components.

== Potential Commercial Applications ==
"Isolation Wall in Forkfet Transistor Structure: Commercial Applications"

== Possible Prior Art ==
There may be prior art related to techniques for isolating components within transistor structures, but specific examples are not provided in the abstract.

== Unanswered Questions ==

=== What materials are used to create the wall within the forkfet transistor structure? ===
The abstract does not specify the materials used for the wall construction.

=== How does the isolation wall impact the overall size and efficiency of the transistor structure? ===
The abstract does not mention the potential effects of the isolation wall on the size and efficiency of the transistor structure.


==Original Abstract Submitted==

embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for techniques for creating a wall within a forkfet transistor structure, where the wall is adjacent to a first stack of nanoribbons on a first side of the wall and a second stack of nanoribbons on a second side of the wall opposite the first side of the wall. in embodiments, the wall extends beyond the top of the first stack of nanoribbons and electrically isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons from each other. other embodiments may be described and/or claimed.



[[Category:H01L29/786]]
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[[Category:H01L29/423]]
[[Category:H01L29/78]]