View source for Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract

=FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Abhishek Anil Sharma of Portland OR (US)|Abhishek Anil Sharma of Portland OR (US)]][[Category:Abhishek Anil Sharma of Portland OR (US)]]

[[:Category:Sagar Suthram of Portland OR (US)|Sagar Suthram of Portland OR (US)]][[Category:Sagar Suthram of Portland OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

[[:Category:Anand Murthy of Portland OR (US)|Anand Murthy of Portland OR (US)]][[Category:Anand Murthy of Portland OR (US)]]

[[:Category:Wilfred Gomes of Portland OR (US)|Wilfred Gomes of Portland OR (US)]][[Category:Wilfred Gomes of Portland OR (US)]]

[[:Category:Pushkar Ranade of San Jose CA (US)|Pushkar Ranade of San Jose CA (US)]][[Category:Pushkar Ranade of San Jose CA (US)]]

==FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105811 titled 'FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION

==Simplified Explanation==

The abstract describes an integrated circuit (IC) die that contains multiple ferroelectric tunnel junction (FTJ) devices. Each FTJ device consists of a first electrode, a second electrode, ferroelectric material between the electrodes, and interface material between at least one electrode and the ferroelectric material.

* Ferroelectric tunnel junction (FTJ) devices are a key component of the integrated circuit die.
* Each FTJ device includes a first electrode, a second electrode, ferroelectric material, and interface material.
* The integration of multiple FTJ devices on the IC die allows for various applications in electronic devices.

== Potential Applications ==
The technology can be applied in:
* Non-volatile memory devices
* Logic devices
* Neuromorphic computing

== Problems Solved ==
* Improved data retention in memory devices
* Enhanced performance in logic devices
* Efficient computing in neuromorphic systems

== Benefits ==
* Higher data storage capacity
* Faster data processing
* Lower power consumption

== Potential Commercial Applications ==
* Memory chips for consumer electronics
* Processors for computers and servers
* Neuromorphic computing systems for AI applications

== Possible Prior Art ==
One example of prior art in this field is the use of ferroelectric materials in memory devices for data retention. However, the specific integration of FTJ devices with interface material on an IC die may be a novel approach.

== Unanswered Questions ==
=== How does the interface material impact the performance of the FTJ devices? ===
The abstract mentions the presence of interface material between the electrodes and the ferroelectric material, but the specific role and effects of this material are not detailed.

=== Are there any limitations or challenges in scaling up this technology for mass production? ===
While the abstract describes the integration of FTJ devices on an IC die, it does not address potential obstacles in manufacturing these devices on a larger scale.


==Original Abstract Submitted==

an integrated circuit (ic) die includes a plurality of ferroelectric tunnel junction (ftj) devices, where at least one ftj of the plurality of ftj devices comprises first electrode, a second electrode, ferroelectric material disposed between the first and second electrodes, and interface material disposed between at least one of the first and second electrodes and the ferroelectric material. other embodiments are disclosed and claimed.



[[Category:H01L29/51]]
[[Category:H01L21/28]]
[[Category:H01L27/11507]]
[[Category:H01L27/1159]]