View source for Intel corporation (20240105584). BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR simplified abstract

=BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR=


==Organization Name==

[[:Category:intel corporation|intel corporation]]


[[Category:intel corporation]]

==Inventor(s)==

[[:Category:Abhishek Anil Sharma of Portland OR (US)|Abhishek Anil Sharma of Portland OR (US)]][[Category:Abhishek Anil Sharma of Portland OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

[[:Category:Anand Murthy of Portland OR (US)|Anand Murthy of Portland OR (US)]][[Category:Anand Murthy of Portland OR (US)]]

[[:Category:Wilfred Gomes of Portland OR (US)|Wilfred Gomes of Portland OR (US)]][[Category:Wilfred Gomes of Portland OR (US)]]

[[:Category:Sagar Suthram of Portland OR (US)|Sagar Suthram of Portland OR (US)]][[Category:Sagar Suthram of Portland OR (US)]]

[[:Category:Pushkar Ranade of San Jose CA (US)|Pushkar Ranade of San Jose CA (US)]][[Category:Pushkar Ranade of San Jose CA (US)]]

==BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105584 titled 'BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR

==Simplified Explanation==

The abstract describes an integrated circuit (IC) die with multiple front-side and back-side metallization layers, as well as a vertical metallization structure connecting these layers.

* The IC die includes a first front-side metallization layer and one or more additional front-side metallization layers.
* It also has a first back-side metallization layer and one or more additional back-side metallization layers.
* The first front-side metallization layer is close to the first back-side metallization layer.
* A vertical metallization structure is formed through at least the first front-side and back-side metallization layers, connecting structures on different layers.

== Potential Applications ==
This technology could be used in various electronic devices, such as smartphones, tablets, and computers, to improve performance and connectivity.

== Problems Solved ==
This innovation solves the problem of efficiently connecting different metallization layers in an IC die, allowing for more complex and compact designs.

== Benefits ==
The benefits of this technology include increased functionality, improved signal transmission, and potentially reduced manufacturing costs.

== Potential Commercial Applications ==
This technology could be valuable in the semiconductor industry for producing advanced ICs with enhanced performance and reliability.

== Possible Prior Art ==
One possible prior art could be the use of through-silicon vias (TSVs) in semiconductor devices to vertically connect different layers, although this technology may offer unique advantages.

=== Unanswered Questions ===

=== How does this technology impact power consumption in electronic devices? ===
This article does not address the potential effects of this technology on power efficiency in electronic devices.

=== What are the environmental implications of using this technology in manufacturing processes? ===
The environmental impact of implementing this technology in semiconductor manufacturing is not discussed in this article.


==Original Abstract Submitted==

an integrated circuit (ic) die includes a plurality of front-side metallization layers including a first front-side metallization layer and one or more additional front-side metallization layers, a plurality of back-side metallization layers formed on the plurality front side metallization layers including a first back-side metallization layer and one or more additional back-side metallization layers, wherein the first front-side metallization layer is proximate to the first back-side metallization layer, and a vertical metallization structure formed through at least the first front-side metallization layer and the first back-side metallization layer, wherein the vertical metallization structure electrically connects a first metallization structure on one of the one or more additional front-side metallization layers to a second metallization structure on one of the one or more additional back-side metallization layers. other embodiments are disclosed and claimed.



[[Category:H01L23/522]]
[[Category:H01L21/768]]