View source for Google llc (20240097093). ELECTRONIC DEVICES WITH IMPURITY GETTERING simplified abstract

=ELECTRONIC DEVICES WITH IMPURITY GETTERING=


==Organization Name==

[[:Category:google llc|google llc]]


[[Category:google llc]]

==Inventor(s)==

[[:Category:Tarek Suwwan De Felipe of Los Altos CA (US)|Tarek Suwwan De Felipe of Los Altos CA (US)]][[Category:Tarek Suwwan De Felipe of Los Altos CA (US)]]

[[:Category:Li Yan of Dublin CA (US)|Li Yan of Dublin CA (US)]][[Category:Li Yan of Dublin CA (US)]]

==ELECTRONIC DEVICES WITH IMPURITY GETTERING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240097093 titled 'ELECTRONIC DEVICES WITH IMPURITY GETTERING

==Simplified Explanation==

The abstract describes an electronic device with a semiconductor structure, a silver-based layer, and a passivation layer made of a II-nitride material.

* The electronic device includes a doped surface on the semiconductor structure.
* The silver-based layer electrically contacts at least a portion of the doped surface.
* The passivation layer is on a portion of the semiconductor structure and is in physical contact with the silver-based layer.
* The passivation layer is a material compound that includes a II-nitride material.

== Potential Applications ==
The technology described in the patent application could be applied in:
* Semiconductor devices
* Electronics manufacturing
* Solar panels

== Problems Solved ==
This technology helps in:
* Improving the electrical performance of electronic devices
* Enhancing the durability of semiconductor structures
* Preventing corrosion of the doped surface

== Benefits ==
The benefits of this technology include:
* Increased efficiency of electronic devices
* Extended lifespan of semiconductor structures
* Enhanced reliability of silver-based layers

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Semiconductor industry
* Electronics production
* Renewable energy sector

== Possible Prior Art ==
One possible prior art for this technology could be the use of different passivation layers in semiconductor devices to improve their performance.

== Unanswered Questions ==

=== How does this technology compare to existing passivation methods in terms of cost-effectiveness? ===
The cost-effectiveness of implementing this technology compared to traditional passivation methods is not addressed in the abstract. Further research and analysis would be needed to determine the economic viability of this innovation.

=== What are the environmental implications of using a II-nitride material in the passivation layer? ===
The environmental impact of utilizing a II-nitride material in the passivation layer is not discussed in the abstract. Understanding the ecological footprint of this technology would be crucial for assessing its sustainability in the long run.


==Original Abstract Submitted==

in a general aspect, an electronic device includes a semiconductor structure including a doped surface, a silver-based (ag-based) layer electrically contacting at least a portion of the doped surface and a passivation layer disposed on a portion of the semiconductor structure. a portion of the passivation layer is in physical contact with the ag-based layer. the passivation layer is a material compound including a ii-nitride material.



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