View source for Denso corporation (20240296091). SEMICONDUCTOR MEMORY DEVICE simplified abstract

=SEMICONDUCTOR MEMORY DEVICE=


==Organization Name==

[[:Category:denso corporation|denso corporation]]


[[Category:denso corporation]]

==Inventor(s)==

[[:Category:TETSURO Takizawa of Nisshin-shi (JP)|TETSURO Takizawa of Nisshin-shi (JP)]][[Category:TETSURO Takizawa of Nisshin-shi (JP)]]

==SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240296091 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the abstract consists of multiple banks, a sense amplifier, an ECC code generation unit, an error correction unit, a first bus, and a second bus. Each bank includes a data recording unit for rewritten data and an ECC code recording unit for corresponding error correction codes. The sense amplifier reads and writes data in each bank, while the ECC code generation unit creates error correction codes and the error correction unit fixes data errors using these codes. The first bus connects the sense amplifiers and the error correction unit, while the second bus links the ECC code generation unit and the sense amplifiers in each bank.

* The semiconductor memory device has multiple banks for data storage.
* Each bank includes a data recording unit and an ECC code recording unit.
* A sense amplifier is present in each bank for reading and writing data.
* An ECC code generation unit creates error correction codes.
* An error correction unit corrects data errors using the generated codes.
* The first bus connects sense amplifiers and the error correction unit.
* The second bus connects the ECC code generation unit to the sense amplifiers in each bank.

Potential Applications:
- Data storage systems
- Error correction in memory devices
- Information technology infrastructure

Problems Solved:
- Data corruption in memory devices
- Efficient error correction mechanisms
- Enhanced data reliability

Benefits:
- Improved data integrity
- Enhanced memory performance
- Reliable storage solutions

Commercial Applications:
Title: Advanced Error Correction Memory Devices for Data Centers
This technology can be utilized in data centers for high-speed and reliable data storage, improving overall system performance and data integrity.

Prior Art:
Prior art related to this technology can be found in research papers and patents focusing on error correction in memory devices, semiconductor memory architectures, and data storage technologies.

Frequently Updated Research:
Researchers are continuously exploring new methods to enhance error correction capabilities in semiconductor memory devices, aiming to improve data reliability and performance.

Questions about Semiconductor Memory Devices:
1. How does the ECC code generation unit contribute to data reliability in memory devices?
2. What are the potential challenges in implementing error correction mechanisms in semiconductor memory devices?


==Original Abstract Submitted==

a semiconductor memory device includes a plurality of banks, a sense amplifier, an ecc code generation unit, an error correction unit, a first bus, and a second bus. the banks include a data recording unit in which rewritten data is to be written, and an ecc code recording unit in which an error correction code corresponding to the rewritten data is to be written. the sense amplifier is included in each of the banks and configured to read and write data from and to each of the banks. the ecc code generation unit generates the error correction code. the error correction unit corrects an error of data using the error correction code. the first bus connects the sense amplifier in each of the banks and the error correction unit. the second bus connects the ecc code generation unit and the sense amplifier in each of the banks.



[[Category:G06F11/10]]
[[Category:G06F12/0806]]
[[Category:CPC_G06F11/1044]]