View source for Boe technology group co., ltd. (20240243206). Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device simplified abstract

=Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device=


==Organization Name==

[[:Category:boe technology group co., ltd.|boe technology group co., ltd.]]


[[Category:boe technology group co., ltd.]]

==Inventor(s)==

[[:Category:Guangcai Yuan of Beijing (CN)|Guangcai Yuan of Beijing (CN)]][[Category:Guangcai Yuan of Beijing (CN)]]

[[:Category:Lingyan Liang of Beijing (CN)|Lingyan Liang of Beijing (CN)]][[Category:Lingyan Liang of Beijing (CN)]]

[[:Category:Hongtao Cao of Beijing (CN)|Hongtao Cao of Beijing (CN)]][[Category:Hongtao Cao of Beijing (CN)]]

[[:Category:Fengjuan Liu of Beijing (CN)|Fengjuan Liu of Beijing (CN)]][[Category:Fengjuan Liu of Beijing (CN)]]

[[:Category:Ce Ning of Beijing (CN)|Ce Ning of Beijing (CN)]][[Category:Ce Ning of Beijing (CN)]]

[[:Category:Fei Wang of Beijing (CN)|Fei Wang of Beijing (CN)]][[Category:Fei Wang of Beijing (CN)]]

[[:Category:Hehe Hu of Beijing (CN)|Hehe Hu of Beijing (CN)]][[Category:Hehe Hu of Beijing (CN)]]

[[:Category:Xiaolong Wang of Beijing (CN)|Xiaolong Wang of Beijing (CN)]][[Category:Xiaolong Wang of Beijing (CN)]]

==Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240243206 titled 'Oxide Semiconductor Layer, Thin Film Transistor and Manufacturing Method Therefor, Display Panel, and Display Device

The patent application describes a thin film transistor with a semiconductor layer made of a metal oxide semiconductor material, including crystals of metal oxide semiconductor formed in the channel region of the layer.

* The thin film transistor includes a substrate and a semiconductor layer made of a metal oxide semiconductor material.
* The semiconductor layer has a channel region with crystals of metal oxide semiconductor formed in it.
* The crystals are located at least in the channel region of the semiconductor layer and near either the first or second surface of the layer.

Potential Applications:
- This technology can be used in the manufacturing of high-performance electronic devices such as displays, sensors, and integrated circuits.

Problems Solved:
- The technology addresses the need for improved performance and efficiency in thin film transistors by utilizing metal oxide semiconductor materials.

Benefits:
- Enhanced performance and efficiency in electronic devices.
- Increased reliability and stability of thin film transistors.

Commercial Applications:
Title: Advanced Thin Film Transistor Technology for High-Performance Electronics
This technology can be applied in the production of advanced electronic devices for various industries such as consumer electronics, healthcare, and automotive sectors, leading to improved product performance and functionality.

Questions about Thin Film Transistor Technology:
1. How does the presence of crystals of metal oxide semiconductor in the channel region impact the performance of the thin film transistor?
- The crystals enhance the conductivity and stability of the transistor, leading to improved overall performance.
2. What are the key advantages of using a metal oxide semiconductor material in the semiconductor layer of the thin film transistor?
- Metal oxide semiconductor materials offer high electron mobility and improved device efficiency compared to traditional materials.


==Original Abstract Submitted==

a thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. the semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. the semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.



[[Category:H01L29/786]]
[[Category:H01L27/12]]
[[Category:H01L29/04]]
[[Category:H01L29/66]]
[[Category:CPC_H01L29/7869]]