View source for Boe technology group co., ltd. (20240186454). LIGHT-EMITTING DEVICE, PIXEL CIRCUIT, LIGHT-EMITTING SUBSTRATE AND DISPLAY APPARATUS simplified abstract

=LIGHT-EMITTING DEVICE, PIXEL CIRCUIT, LIGHT-EMITTING SUBSTRATE AND DISPLAY APPARATUS=


==Organization Name==

[[:Category:boe technology group co., ltd.|boe technology group co., ltd.]]


[[Category:boe technology group co., ltd.]]

==Inventor(s)==

[[:Category:Weixing Liu of Beijing (CN)|Weixing Liu of Beijing (CN)]][[Category:Weixing Liu of Beijing (CN)]]

[[:Category:Kuanjun Peng of Beijing (CN)|Kuanjun Peng of Beijing (CN)]][[Category:Kuanjun Peng of Beijing (CN)]]

[[:Category:Xiaolong Li of Beijing (CN)|Xiaolong Li of Beijing (CN)]][[Category:Xiaolong Li of Beijing (CN)]]

[[:Category:Wanpeng Teng of Beijing (CN)|Wanpeng Teng of Beijing (CN)]][[Category:Wanpeng Teng of Beijing (CN)]]

[[:Category:Bin Qin of Beijing (CN)|Bin Qin of Beijing (CN)]][[Category:Bin Qin of Beijing (CN)]]

[[:Category:Wanzhi Chen of Beijing (CN)|Wanzhi Chen of Beijing (CN)]][[Category:Wanzhi Chen of Beijing (CN)]]

[[:Category:Fangzhen Zhang of Beijing (CN)|Fangzhen Zhang of Beijing (CN)]][[Category:Fangzhen Zhang of Beijing (CN)]]

[[:Category:Chunfang Zhang of Beijing (CN)|Chunfang Zhang of Beijing (CN)]][[Category:Chunfang Zhang of Beijing (CN)]]

[[:Category:Zhiqiang Xu of Beijing (CN)|Zhiqiang Xu of Beijing (CN)]][[Category:Zhiqiang Xu of Beijing (CN)]]

==LIGHT-EMITTING DEVICE, PIXEL CIRCUIT, LIGHT-EMITTING SUBSTRATE AND DISPLAY APPARATUS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240186454 titled 'LIGHT-EMITTING DEVICE, PIXEL CIRCUIT, LIGHT-EMITTING SUBSTRATE AND DISPLAY APPARATUS

==Simplified Explanation==

The patent application describes a light-emitting device with stacked semiconductor layers and light-emitting patterns that overlap to form light-emitting portions.

* The device includes a first semiconductor layer with patterns, a light-emitting functional layer with light-emitting patterns, and a second semiconductor layer with patterns.
* Orthographic projections of the patterns overlap on a reference plane to form light-emitting portions.
* The reference plane is parallel to the plane of the first semiconductor layer.

== Potential Applications ==
The technology described in the patent application could be used in:
* LED displays
* Solid-state lighting
* Optoelectronic devices

== Problems Solved ==
This technology solves issues related to:
* Efficient light emission
* Compact design
* Improved performance

== Benefits ==
The benefits of this technology include:
* Enhanced brightness
* Energy efficiency
* Space-saving design

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Automotive lighting
* Signage and displays

== Possible Prior Art ==
One possible prior art for this technology could be:
* Stacked semiconductor layers in LED technology

== Unanswered Questions ==
=== How does the device handle heat dissipation? ===
The patent application does not provide information on how heat generated by the device is managed.

=== What materials are used in the semiconductor layers? ===
The patent application does not specify the materials used in the semiconductor layers.


==Original Abstract Submitted==

a light-emitting device includes a first semiconductor layer, a light-emitting functional layer and a second semiconductor layer that are stacked. the first semiconductor layer includes a first semiconductor pattern and a second semiconductor pattern. the light-emitting functional layer includes a first light-emitting pattern and a second light-emitting pattern spaced apart. the second semiconductor layer includes a third semiconductor pattern and a fourth semiconductor pattern spaced apart. orthographic projections of the first semiconductor pattern, the first light-emitting pattern and the third semiconductor pattern on a reference plane at least partially overlap to form a first light-emitting portion. orthographic projections of the second semiconductor pattern, the second light-emitting pattern and the fourth semiconductor pattern on the reference plane at least partially overlap to form a second light-emitting portion. the reference plane is parallel to a plane where the first semiconductor layer is located.



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