View source for Applied materials, inc. (20250101575). Methods for Depositing Film Layers

=Methods for Depositing Film Layers=


==Organization Name==

[[:Category:applied materials, inc.|applied materials, inc.]]


[[Category:applied materials, inc.]]

==Inventor(s)==

[[:Category:Yaoying Zhong of Singapore SG|Yaoying Zhong of Singapore SG]][[Category:Yaoying Zhong of Singapore SG]]

[[:Category:Siew Kit Hoi of Singapore SG|Siew Kit Hoi of Singapore SG]][[Category:Siew Kit Hoi of Singapore SG]]

[[:Category:Haomin Xu of Singapore SG|Haomin Xu of Singapore SG]][[Category:Haomin Xu of Singapore SG]]

[[:Category:Li Ying Choo of Singapore SG|Li Ying Choo of Singapore SG]][[Category:Li Ying Choo of Singapore SG]]

[[:Category:Xiao Tan of Singapore SG|Xiao Tan of Singapore SG]][[Category:Xiao Tan of Singapore SG]]

[[:Category:Jay Min Soh of Singapore SG|Jay Min Soh of Singapore SG]][[Category:Jay Min Soh of Singapore SG]]

==Methods for Depositing Film Layers==


This abstract first appeared for US patent application 20250101575 titled 'Methods for Depositing Film Layers

==Original Abstract Submitted==

a method for depositing a film layer on a substrate incorporates ion flux control to alter sputtering atom trajectories. a method may include flowing argon gas around a periphery of the substrate with a surface of the substrate having a plurality of structures with sidewalls and an edge region containing edge structures near the periphery of the substrate, forming a plasma to ionize the argon gas to form ar+ ion flux to induce sputtering of aluminum to generate aluminum atoms for deposition on the substrate, generating an ac bias on the substrate to increase the ar+ ion flux density at the edge region of the substrate to alter aluminum atom trajectories striking the edge region, and heating the substrate to increase mobility of the aluminum atoms deposited on the edge structures.



[[Category:C23C16/04]]
[[Category:C23C16/12]]
[[Category:CPC_C23C16/045]]