View source for Applied materials, inc. (20250006563). CHARACTERIZING DEFECTS IN SEMICONDUCTOR LAYERS

=CHARACTERIZING DEFECTS IN SEMICONDUCTOR LAYERS=


==Organization Name==

[[:Category:applied materials, inc.|applied materials, inc.]]


[[Category:applied materials, inc.]]

==Inventor(s)==

[[:Category:Milan Pesic of Paoli PA US|Milan Pesic of Paoli PA US]][[Category:Milan Pesic of Paoli PA US]]

==CHARACTERIZING DEFECTS IN SEMICONDUCTOR LAYERS==


This abstract first appeared for US patent application 20250006563 titled 'CHARACTERIZING DEFECTS IN SEMICONDUCTOR LAYERS

==Original Abstract Submitted==

a method of characterizing defects in semiconductor layers may include forming a first electrode, a first barrier layer, a semiconductor layer, and a second electrode, where the first barrier layer is between the first electrode and the semiconductor layer, and the semiconductor layer is between the first barrier layer and the second electrode. the method may also include causing current to flow through the semiconductor layer, where the first barrier layer prevents the current from entering a conduction band of the semiconductor layer and instead causes current to flow through defects in the semiconductor layer. the method may also include characterizing the defects in the semiconductor layer based on the current flowing through the defects in the semiconductor layer.



[[Category:H01L21/66]]
[[Category:H01L29/24]]
[[Category:CPC_H01L22/12]]