View source for Apple inc. (20240105727). Vertical Transistor Cell Structures Utilizing Topside and Backside Resources simplified abstract

=Vertical Transistor Cell Structures Utilizing Topside and Backside Resources=


==Organization Name==

[[:Category:apple inc.|apple inc.]]


[[Category:apple inc.]]

==Inventor(s)==

[[:Category:Xin Miao of Saratoga CA (US)|Xin Miao of Saratoga CA (US)]][[Category:Xin Miao of Saratoga CA (US)]]

[[:Category:Praveen Raghavan of Cupertino CA (US)|Praveen Raghavan of Cupertino CA (US)]][[Category:Praveen Raghavan of Cupertino CA (US)]]

[[:Category:Thomas Hoffmann of Los Gatos CA (US)|Thomas Hoffmann of Los Gatos CA (US)]][[Category:Thomas Hoffmann of Los Gatos CA (US)]]

[[:Category:Saurabh P. Sinha of Austin TX (US)|Saurabh P. Sinha of Austin TX (US)]][[Category:Saurabh P. Sinha of Austin TX (US)]]

==Vertical Transistor Cell Structures Utilizing Topside and Backside Resources - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105727 titled 'Vertical Transistor Cell Structures Utilizing Topside and Backside Resources

==Simplified Explanation==

The patent application describes various structures that implement topside metal routing and backside metal routing in combination with vertical transistors. These structures include cells forming inverter devices, NAND devices, and MUX (multiplexer) devices. The cells consist of two or four vertical transistors with different connections made to the transistors, including connected gate logic for inverter and NAND devices, or disconnected gate logic for MUX devices.

* Topsdie metal routing and backside metal routing implemented with vertical transistors
* Cells for inverter, NAND, and MUX devices
* Two or four vertical transistors in the cells
* Different connections made to the transistors for various devices

== Potential Applications ==
The technology described in the patent application could be applied in the semiconductor industry for the development of more efficient and compact integrated circuits.

== Problems Solved ==
This technology solves the problem of optimizing metal routing in combination with vertical transistors to enhance the performance and functionality of semiconductor devices.

== Benefits ==
The benefits of this technology include improved circuit efficiency, increased functionality, and potentially reduced manufacturing costs.

== Potential Commercial Applications ==
The technology could be utilized in the production of advanced electronic devices such as smartphones, computers, and other consumer electronics.

== Possible Prior Art ==
Prior art in the field of semiconductor technology may include existing methods of metal routing and transistor integration in integrated circuits.

=== Unanswered Questions ===

=== How does this technology compare to traditional horizontal transistor layouts in terms of performance and efficiency? ===
This article does not provide a direct comparison between the technology described and traditional horizontal transistor layouts. 

=== What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes? ===
The article does not address the potential challenges that may arise when implementing this technology on a large scale in semiconductor manufacturing processes.


==Original Abstract Submitted==

various structures that implement topside metal routing and backside metal routing in combination with vertical transistors are disclosed. the various structures include cells that form inverter devices, nand devices, and mux (multiplexer) devices. the disclosed cells include two or four vertical transistors with various connections made to the transistors that include either connected gate logic for inverter and nand devices or disconnected gate logic for mux devices.



[[Category:H01L27/118]]