View source for Apple inc. (20240105702). 3D Package with Chip-on-Reconstituted Wafer or Reconstituted Wafer-on-Reconstituted Wafer Bonding simplified abstract

=3D Package with Chip-on-Reconstituted Wafer or Reconstituted Wafer-on-Reconstituted Wafer Bonding=


==Organization Name==

[[:Category:apple inc.|apple inc.]]


[[Category:apple inc.]]

==Inventor(s)==

[[:Category:Chonghua Zhong of Cupertino CA (US)|Chonghua Zhong of Cupertino CA (US)]][[Category:Chonghua Zhong of Cupertino CA (US)]]

[[:Category:Jiongxin Lu of Cupertino CA (US)|Jiongxin Lu of Cupertino CA (US)]][[Category:Jiongxin Lu of Cupertino CA (US)]]

[[:Category:Kunzhong Hu of Cupertino CA (US)|Kunzhong Hu of Cupertino CA (US)]][[Category:Kunzhong Hu of Cupertino CA (US)]]

[[:Category:Jun Zhai of Cupertino CA (US)|Jun Zhai of Cupertino CA (US)]][[Category:Jun Zhai of Cupertino CA (US)]]

[[:Category:Sanjay Dabral of Cupertino CA (US)|Sanjay Dabral of Cupertino CA (US)]][[Category:Sanjay Dabral of Cupertino CA (US)]]

==3D Package with Chip-on-Reconstituted Wafer or Reconstituted Wafer-on-Reconstituted Wafer Bonding - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240105702 titled '3D Package with Chip-on-Reconstituted Wafer or Reconstituted Wafer-on-Reconstituted Wafer Bonding

==Simplified Explanation==

The abstract describes a semiconductor package formed using wafer reconstitution, potentially including an integrated heat spreader. The package consists of multiple levels, with one or more chiplets in the second package level, and a heat spreader bonded to the second level with a metallic layer.

* Semiconductor package formed utilizing wafer reconstitution
* Includes integrated heat spreader
* Consists of multiple package levels
* Second package level includes one or more chiplets
* Heat spreader bonded with metallic layer
* Metallic layer may contain intermetallic compounds formed by transient liquid phase bonding

== Potential Applications ==
The technology could be applied in various electronic devices requiring efficient heat dissipation, such as high-performance computers, servers, and automotive electronics.

== Problems Solved ==
This technology solves the problem of heat dissipation in semiconductor packages, which is crucial for maintaining optimal performance and reliability of electronic devices.

== Benefits ==
* Improved heat dissipation
* Enhanced performance and reliability of electronic devices
* Potential for smaller form factors due to integrated heat spreader

== Potential Commercial Applications ==
* High-performance computers
* Servers
* Automotive electronics

== Possible Prior Art ==
One potential prior art could be the use of heat spreaders in semiconductor packages to improve thermal management. However, the specific method of wafer reconstitution and bonding with metallic layers for heat spreaders may be a novel aspect of this technology.

=== Unanswered Questions ===

=== How does this technology compare to traditional methods of heat dissipation in semiconductor packages? ===
This article does not provide a direct comparison between this technology and traditional methods of heat dissipation. It would be interesting to know if this approach offers significant improvements in thermal management over existing techniques.

=== What are the potential challenges or limitations of implementing this technology in mass production? ===
The article does not address the potential challenges or limitations of mass-producing semiconductor packages using wafer reconstitution and integrated heat spreaders. Understanding the scalability and cost-effectiveness of this technology would be crucial for its widespread adoption in the industry.


==Original Abstract Submitted==

semiconductor packages formed utilizing wafer reconstitution and optionally including an integrated heat spreader and methods of fabrication are described. in an embodiment, a semiconductor package includes a first package level, a second package level including one or more second-level chiplets, and a heat spreader bonded to the second package level with a metallic layer, which may include one or more intermetallic compounds formed by transient liquid phase bonding.



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