View source for Advanced micro devices, inc. (20240113070). INTEGRATING DEVICES INTO A CARRIER WAFER FOR THREE DIMENSIONALLY STACKED SEMICONDUCTOR DEVICES simplified abstract

=INTEGRATING DEVICES INTO A CARRIER WAFER FOR THREE DIMENSIONALLY STACKED SEMICONDUCTOR DEVICES=


==Organization Name==

[[:Category:advanced micro devices, inc.|advanced micro devices, inc.]]


[[Category:advanced micro devices, inc.]]

==Inventor(s)==

[[:Category:CHINTAN Buch of SANTA CLARA CA (US)|CHINTAN Buch of SANTA CLARA CA (US)]][[Category:CHINTAN Buch of SANTA CLARA CA (US)]]

[[:Category:RAJA Swaminathan of AUSTIN TX (US)|RAJA Swaminathan of AUSTIN TX (US)]][[Category:RAJA Swaminathan of AUSTIN TX (US)]]

==INTEGRATING DEVICES INTO A CARRIER WAFER FOR THREE DIMENSIONALLY STACKED SEMICONDUCTOR DEVICES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240113070 titled 'INTEGRATING DEVICES INTO A CARRIER WAFER FOR THREE DIMENSIONALLY STACKED SEMICONDUCTOR DEVICES

==Simplified Explanation==

The method described in the abstract involves forming a semiconductor assembly by integrating devices into a carrier wafer, coupling a die to the carrier wafer using hybrid bonding, connecting the die to the integrated devices through through-silicon vias, and then coupling a second wafer to the die. A portion of the carrier wafer is removed to reveal the conductive portion of the through-silicon vias.

* Through-silicon vias are formed in a carrier wafer.
* A die is attached to the carrier wafer using hybrid bonding.
* Connection layers of the die are connected to the through-silicon vias and integrated devices.
* A second wafer is attached to the die.
* A portion of the carrier wafer is removed to expose the conductive portion of the through-silicon vias.

== Potential Applications ==
This technology can be applied in the semiconductor industry for the manufacturing of advanced semiconductor assemblies with improved performance and compact design.

== Problems Solved ==
This technology solves the problem of efficiently connecting integrated devices to through-silicon vias in a semiconductor assembly, allowing for enhanced functionality and reliability.

== Benefits ==
The benefits of this technology include increased efficiency in semiconductor assembly manufacturing, improved performance of integrated devices, and enhanced reliability of the overall semiconductor assembly.

== Potential Commercial Applications ==
The potential commercial applications of this technology include the production of high-performance semiconductor assemblies for various electronic devices, such as smartphones, computers, and IoT devices.

== Possible Prior Art ==
One possible prior art for this technology could be the use of traditional bonding methods in semiconductor assembly manufacturing, which may not offer the same level of efficiency and reliability as hybrid bonding techniques.

=== Unanswered Questions ===

== How does this technology compare to traditional bonding methods in terms of performance and reliability? ==
The article does not provide a direct comparison between this technology and traditional bonding methods in terms of performance and reliability. Further research or testing may be needed to determine the advantages of this technology over traditional methods.

== What are the potential challenges or limitations of implementing this technology on a large scale in semiconductor manufacturing? ==
The article does not address the potential challenges or limitations of implementing this technology on a large scale in semiconductor manufacturing. Factors such as cost, scalability, and compatibility with existing processes may need to be considered for widespread adoption.


==Original Abstract Submitted==

a method of forming a semiconductor assembly includes forming a set of through-silicon vias in a carrier wafer, where a layer of the carrier wafer includes integrated devices. a die is coupled to a top surface of the carrier wafer including the set of through-silicon vias using hybrid bonding. one or more connection layers of the die are coupled to one or more of the through-silicon vias and coupled to one or more of the integrated devices. a second wafer is coupled to a top surface of the die. an amount is removed from a bottom surface of the carrier wafer that is parallel to and opposite to the top surface of the carrier wafer to reveal a conductive portion of at least one of the through-silicon vias.



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