View source for 20250234566. Memory Device (MACRONIX INTERNATIONAL ., .)

= MEMORY DEVICE AND METHOD FOR OPERATING THE SAME =

'''Abstract''':
a memory device and a method for operating a memory device are provided. the memory device includes a stack structure including a memory array stack and a staircase stack, an insulating film on the memory array stack, a conductive film on the staircase stack and on a sidewall of the insulating film, a pillar element on the staircase stack and passing through the conductive film, and memory cells in the memory array stack and electrically connected to the pillar element.

'''Inventor(s)''': [[:Category:Erh-Kun LAI of Taichung County  TW|Erh-Kun LAI]], [[:Category:Hsiang-Lan LUNG of Kaohsiung City  TW|Hsiang-Lan LUNG]]

'''CPC Classification''': [[:Category:CPC_H10B99/10|H10B99/10]] (ELECTRONIC MEMORY DEVICES)


[[Category:Patent Applications]]
[[Category:MACRONIX INTERNATIONAL CO., LTD.]]
[[Category:CPC_H10B99/10]]
[[Category:Erh-Kun LAI of Taichung County  TW]]
[[Category:Hsiang-Lan LUNG of Kaohsiung City  TW]]

[https://wikipatents.org/index.php?search=20250234566+rejection&title=Special%3ASearch&wprov=acrw1_-1 Search for rejections for patent application number 20250234566]


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