View source for 20250232968. Resonant Frequency Shif (KING FAISAL UNIVERSITY)

= Resonant Frequency Shift as Etch Stop of Gate Oxide of MOSFET Transistor =

'''Abstract''':
an etch process performed during semiconductor processing is monitored using a resonant structure on a surface of a wafer, formed on the surface of a wafer as a resonant cavity. a resonance sensor is positioned over the wafer within a plasma etch chamber so as to establish a resonance with the resonant structure. a resonant frequency of the resonant structure is sensed through the resonant structure and shifts in the resonant frequency are thereby detected during an etch process as a measurement of the etch process. the etch process is controlled in accordance with the shift in the resonant frequency.

'''Inventor(s)''': [[:Category:HESHAM MOHAMMED ENSHASY of ALHasaa  SA|HESHAM MOHAMMED ENSHASY]]

'''CPC Classification''': [[:Category:CPC_H01J37/32963|H01J37/32963]] (Gas-filled discharge tubes  (heating by discharge ))


[[Category:Patent Applications]]
[[Category:KING FAISAL UNIVERSITY]]
[[Category:CPC_H01J37/32963]]
[[Category:HESHAM MOHAMMED ENSHASY of ALHasaa  SA]]

[https://wikipatents.org/index.php?search=20250232968+rejection&title=Special%3ASearch&wprov=acrw1_-1 Search for rejections for patent application number 20250232968]


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