View source for 20250232807. Memory System (KIOXIA)

= MEMORY SYSTEM =

'''Abstract''':
a memory system has a nonvolatile memory which comprises memory cells capable of storing 4-bit data of first to fourth bits by sixteen threshold regions including a first threshold region corresponding to an erased state and second to sixteenth threshold regions having higher voltage levels than a voltage level of the first threshold region corresponding to a written state; and a controller which causes the nonvolatile memory to execute a first program for writing data of the first bit and the second bit and then causes the nonvolatile memory to execute a second program for writing data of the third bit and the fourth bit. the controller controls such that the threshold region is any threshold region of a seventeenth threshold region corresponding to an erased state and eighteenth to twentieth threshold regions having higher voltage levels than that of the seventeenth threshold region corresponding to a written state.

'''Inventor(s)''': [[:Category:Tokumasa HARA of Kawasaki  JP|Tokumasa HARA]], [[:Category:Noboru SHIBATA of Kawasaki  JP|Noboru SHIBATA]]

'''CPC Classification''': [[:Category:CPC_G11C11/56|G11C11/56]] (using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency)


[[Category:Patent Applications]]
[[Category:KIOXIA CORPORATION]]
[[Category:CPC_G11C11/56]]
[[Category:Tokumasa HARA of Kawasaki  JP]]
[[Category:Noboru SHIBATA of Kawasaki  JP]]

[https://wikipatents.org/index.php?search=20250232807+rejection&title=Special%3ASearch&wprov=acrw1_-1 Search for rejections for patent application number 20250232807]


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