View source for 20240088032.Structure and Method of Fabrication for High Performance Integrated Passive Device simplified abstract (apple inc.)

=Structure and Method of Fabrication for High Performance Integrated Passive Device=


==Organization Name==

[[:Category:apple inc.|apple inc.]]


[[Category:apple inc.]]

==Inventor(s)==

[[:Category:Vidhya Ramachandran of Cupertino CA (US)|Vidhya Ramachandran of Cupertino CA (US)]][[Category:Vidhya Ramachandran of Cupertino CA (US)]]

[[:Category:Chi Nung Ni of Foster City CA (US)|Chi Nung Ni of Foster City CA (US)]][[Category:Chi Nung Ni of Foster City CA (US)]]

[[:Category:Chueh-An Hsieh of Hsinchu County (TW)|Chueh-An Hsieh of Hsinchu County (TW)]][[Category:Chueh-An Hsieh of Hsinchu County (TW)]]

[[:Category:Rekha Govindaraj of San Jose CA (US)|Rekha Govindaraj of San Jose CA (US)]][[Category:Rekha Govindaraj of San Jose CA (US)]]

[[:Category:Jun Zhai of Cupertino CA (US)|Jun Zhai of Cupertino CA (US)]][[Category:Jun Zhai of Cupertino CA (US)]]

[[:Category:Long Huang of San Jose CA (US)|Long Huang of San Jose CA (US)]][[Category:Long Huang of San Jose CA (US)]]

[[:Category:Rohan U. Mandrekar of Sunnyvale CA (US)|Rohan U. Mandrekar of Sunnyvale CA (US)]][[Category:Rohan U. Mandrekar of Sunnyvale CA (US)]]

[[:Category:Saumya K. Gandhi of San Francisco CA (US)|Saumya K. Gandhi of San Francisco CA (US)]][[Category:Saumya K. Gandhi of San Francisco CA (US)]]

[[:Category:Zhuo Yan of San Jose CA (US)|Zhuo Yan of San Jose CA (US)]][[Category:Zhuo Yan of San Jose CA (US)]]

[[:Category:Yizhang Yang of Sunnyvale CA (US)|Yizhang Yang of Sunnyvale CA (US)]][[Category:Yizhang Yang of Sunnyvale CA (US)]]

[[:Category:Saurabh P. Sinha of Austin TX (US)|Saurabh P. Sinha of Austin TX (US)]][[Category:Saurabh P. Sinha of Austin TX (US)]]

[[:Category:Antonietta Oliva of Sausalito CA (US)|Antonietta Oliva of Sausalito CA (US)]][[Category:Antonietta Oliva of Sausalito CA (US)]]

==Structure and Method of Fabrication for High Performance Integrated Passive Device - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240088032 titled 'Structure and Method of Fabrication for High Performance Integrated Passive Device

==Simplified Explanation==

The abstract describes a microelectronic module that includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The integrated passive device may have an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up, and may be solder bonded or hybrid bonded with the chip.

* The microelectronic module includes a module substrate, a chip, and a semiconductor-based integrated passive device.
* The integrated passive device has an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up.
* The integrated passive device may be solder bonded or hybrid bonded with the chip.

== Potential Applications ==
The technology described in the patent application could be applied in:
* Advanced electronics manufacturing
* Semiconductor industry
* Microelectronic packaging

== Problems Solved ==
This technology helps in:
* Improving performance of microelectronic modules
* Enhancing reliability of integrated passive devices
* Streamlining chip bonding processes

== Benefits ==
The benefits of this technology include:
* Increased efficiency in microelectronic module assembly
* Enhanced signal integrity in electronic devices
* Cost-effective manufacturing processes

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Telecommunications
* Automotive industry

== Possible Prior Art ==
One possible prior art in this field is the use of traditional passive components in microelectronic modules.

== Unanswered Questions ==

=== How does this technology compare to existing passive devices in terms of performance and reliability? ===
The article does not provide a direct comparison between this technology and existing passive devices. Further research or testing may be needed to determine the advantages of this innovation.

=== What are the specific manufacturing challenges that this technology addresses in the semiconductor industry? ===
The article does not delve into the specific manufacturing challenges that this technology addresses. Understanding these challenges could provide insights into the impact of this innovation on the industry.


==Original Abstract Submitted==

microelectronic modules are described. in an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. the semiconductor-based integrated passive device may include an upper rdl stack-up with thicker wiring layers than a lower beol stack-up. the semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.



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