View source for 20240087640.SEMICONDUCTOR DEVICE simplified abstract (samsung electronics co., ltd.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:samsung electronics co., ltd.|samsung electronics co., ltd.]]


[[Category:samsung electronics co., ltd.]]

==Inventor(s)==

[[:Category:Seongjin Cho of Suwon-si (KR)|Seongjin Cho of Suwon-si (KR)]][[Category:Seongjin Cho of Suwon-si (KR)]]

[[:Category:Kyuchang Kang of Suwon-si (KR)|Kyuchang Kang of Suwon-si (KR)]][[Category:Kyuchang Kang of Suwon-si (KR)]]

[[:Category:Keonwoo Park of Suwon-si (KR)|Keonwoo Park of Suwon-si (KR)]][[Category:Keonwoo Park of Suwon-si (KR)]]

[[:Category:Donghak Shin of Suwon-si (KR)|Donghak Shin of Suwon-si (KR)]][[Category:Donghak Shin of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240087640 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract is a memory device with a unique word line driving circuit that allows for improved performance and efficiency. Here is a simplified explanation of the patent application:

* The semiconductor device includes a memory cell array with multiple memory cells connected to word lines and bit lines.
* It also has a word line driving circuit with sub-word line decoders connected to the word lines.
* The control logic determines selected and unselected word lines and controls the word line driving circuit to float at least one unselected word line adjacent to the selected word line during a specific period.

Potential Applications of this Technology:
- This technology could be used in various memory devices such as RAM, flash memory, and solid-state drives.
- It could also be applied in embedded systems, IoT devices, and mobile devices to enhance memory performance.

Problems Solved by this Technology:
- This technology helps improve memory access speed and efficiency by floating unselected word lines, reducing interference and improving signal integrity.
- It also helps reduce power consumption by optimizing the operation of the word line driving circuit.

Benefits of this Technology:
- Faster memory access and data retrieval.
- Improved overall performance and efficiency of memory devices.
- Reduced power consumption and improved energy efficiency.

Potential Commercial Applications of this Technology:
- Memory chip manufacturers could integrate this technology into their products to offer faster and more efficient memory solutions.
- Consumer electronics companies could use this technology to enhance the performance of their devices, leading to better user experience.

Possible Prior Art:
- Prior art related to memory cell arrays, word line driving circuits, and control logic in semiconductor devices may exist. However, specific prior art related to the unique combination of features described in this patent application would need to be researched further.

Unanswered Questions:
1. How does the floating of unselected word lines improve the overall performance of the memory device?
2. Are there any specific limitations or drawbacks associated with the implementation of this word line driving circuit in semiconductor devices?


==Original Abstract Submitted==

a semiconductor device includes a memory cell array that includes a plurality of memory cells electrically connected to a plurality of word lines and a plurality of bit lines, a word line driving circuit that includes a plurality of sub-word line decoders electrically connected to the plurality of word lines, and a control logic configured to determine a selected word line and unselected word lines among the plurality of word lines, and configured to control the word line driving circuit such that at least one of the unselected word lines that is adjacent to the selected word line is floated during at least a portion of a period in which a voltage of the selected word line returns to an initial level.



[[Category:G11C11/408]]
[[Category:G11C11/4091]]
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