View source for 20240052520. SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE simplified abstract (KISELKARBID I STOCKHOLM AB)

=SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE=


==Organization Name==

[[:Category:KISELKARBID I STOCKHOLM AB|KISELKARBID I STOCKHOLM AB]]


[[Category:KISELKARBID I STOCKHOLM AB]]

==Inventor(s)==

[[:Category:Johan Peter Ekman of Saltsjöbaden (SE)|Johan Peter Ekman of Saltsjöbaden (SE)]][[Category:Johan Peter Ekman of Saltsjöbaden (SE)]]

[[:Category:Lin Dong of Spânga (SE)|Lin Dong of Spânga (SE)]][[Category:Lin Dong of Spânga (SE)]]

[[:Category:Kassem Alassaad of Järfälla (SE)|Kassem Alassaad of Järfälla (SE)]][[Category:Kassem Alassaad of Järfälla (SE)]]

==SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240052520 titled 'SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE

==Simplified Explanation==

The patent application describes a system for producing an epitaxial monocrystalline layer on a substrate using a cavity to accommodate a source material and the substrate, along with heating means to heat the cavity. The inner container includes spacer elements to support the substrate at a predetermined distance above the source material.

* Inner container with spacer elements to support substrate above source material
* Insulation container to accommodate inner container
* Outer container to accommodate insulation and inner containers
* Heating means outside outer container to heat the cavity

### Potential Applications
* Semiconductor manufacturing
* Solar cell production
* LED manufacturing

### Problems Solved
* Ensures uniform epitaxial monocrystalline layer growth
* Prevents contamination of the substrate
* Facilitates precise control of layer thickness

### Benefits
* Improved quality of epitaxial layers
* Enhanced efficiency in manufacturing processes
* Cost-effective production of monocrystalline layers


==Original Abstract Submitted==

a system () for producing an epitaxial monocrystalline layer on a substrate () comprising: an inner container () defining a cavity () for accommodating a source material () and the substrate (); an insulation container () arranged to accommodate the inner container () therein; an outer container () arranged to accommodate the insulation container () and the inner container () therein; and heating means () arranged outside the outer container () and configured to heat the cavity (), wherein the inner container () comprises a plurality of spacer elements () arranged to support the substrate () at a predetermined distance above a solid monolithic source material (), wherein each spacer element () comprises a base portion () and a top portion (), wherein at least part of the top portion () tapers towards an apex () arranged to contact the substrate (). a corresponding method is also disclosed.



[[Category:C30B23/06]]
[[Category:C23C14/50]]
[[Category:C23C14/24]]
[[Category:C30B29/36]]
[[Category:C23C14/06]]