View source for 20240023461. QUANTUM INFORMATION PROCESSING DEVICE FORMATION simplified abstract (GOOGLE LLC)

=QUANTUM INFORMATION PROCESSING DEVICE FORMATION=


==Organization Name==

[[:Category:GOOGLE LLC|GOOGLE LLC]]


[[Category:GOOGLE LLC]]

==Inventor(s)==

[[:Category:Anthony Edward Megrant of Goleta CA (US)|Anthony Edward Megrant of Goleta CA (US)]][[Category:Anthony Edward Megrant of Goleta CA (US)]]

==QUANTUM INFORMATION PROCESSING DEVICE FORMATION - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240023461 titled 'QUANTUM INFORMATION PROCESSING DEVICE FORMATION

==Simplified Explanation==

The abstract describes a method for forming a quantum information processing device. Here is a simplified explanation of the patent application:

* A first electrically-conductive layer is provided on a substrate.
* A layer of dielectric material is deposited on the first electrically-conductive layer.
* The layer of dielectric material is patterned to form a pad of dielectric material and reveal a first region of the first electrically-conductive layer.
* A second electrically-conductive layer is deposited on the pad of dielectric material and the first region of the first electrically-conductive layer.
* The second electrically-conductive layer is patterned.
* The pad of dielectric material is removed using isotropic gas phase etching.

Potential Applications of this Technology:

* Quantum computing: The formed quantum information processing device can be used in quantum computing systems.
* Quantum communication: The device can be utilized in quantum communication systems for secure transmission of information.
* Quantum sensing: The technology can be applied in quantum sensors for high-precision measurements.

Problems Solved by this Technology:

* Fabrication challenges: The method provides a solution for forming a quantum information processing device by overcoming fabrication challenges.
* Integration issues: The technology addresses integration issues in the manufacturing process of quantum devices.

Benefits of this Technology:

* Improved device performance: The method allows for the formation of high-performance quantum information processing devices.
* Enhanced scalability: The technology enables the fabrication of scalable quantum devices.
* Cost-effective manufacturing: The method offers a cost-effective approach for producing quantum information processing devices.


==Original Abstract Submitted==

a method for forming at least part of a quantum information processing device is presented. the method includes providing a first electrically-conductive layer formed of a first electrically-conductive material on a principal surface of a substrate, depositing a layer of dielectric material on the first electrically-conductive material, patterning the layer of dielectric material to form a pad of dielectric material and to reveal a first region of the first electrically-conductive layer, depositing a second electrically-conductive layer on the pad of dielectric material and on the first region of the first electrically-conductive layer, patterning the second electrically-conductive layer and removing the pad of dielectric material using isotropic gas phase etching.



[[Category:H10N60/01]]
[[Category:G06N10/00]]