View source for 20240023319. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Junhyeok Ahn of Suwon-si (KR)|Junhyeok Ahn of Suwon-si (KR)]][[Category:Junhyeok Ahn of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 20240023319 titled 'SEMICONDUCTOR DEVICE

==Simplified Explanation==

The abstract describes a semiconductor device that includes various layers and structures to enable data storage. The device has an active region defined by a device isolation layer and a pad layer. It also includes a first region of the active region, a first separation layer extending in one direction, a second separation layer extending in another direction, a word line below the second separation layer, and a bit line connected to a second region of the active region. There is a contact structure on the side surface of the bit line, and a data storage structure on the contact structure.

* The first separation layer has an airgap or a material with a lower dielectric constant than silicon nitride.
* The device uses a pad layer, separation layers, and contact structures to enable data storage in the active region.
* The word line and bit line are used for accessing and storing data in the active region.

Potential applications of this technology:
* Memory devices: The semiconductor device described in the patent application can be used in memory devices such as flash memory or DRAM.
* Data storage systems: The technology can be applied in various data storage systems, including solid-state drives (SSDs) or memory cards.

Problems solved by this technology:
* Data storage density: The use of separation layers and contact structures allows for increased data storage density in the active region.
* Signal interference: The pad layer and separation layers help in reducing signal interference between different regions of the device.

Benefits of this technology:
* Higher data storage capacity: The use of the described layers and structures enables higher data storage capacity in the semiconductor device.
* Improved performance: The technology helps in reducing signal interference and improving the overall performance of the device.


==Original Abstract Submitted==

a semiconductor device includes an active region defined by a device isolation layer, a pad layer on the device isolation layer and a first region of the active region, a first separation layer penetrating through the pad layer and extending in a first direction, a second separation layer penetrating through the pad layer and extending in a second direction, a word line below the second separation layer, extending in the second direction, and embedded in a substrate, a bit line extending in the first direction and connected to a second region of the active region, a contact structure on a side surface of the bit line and connected to the pad layer, and an data storage structure on the contact structure and connected to the contact structure. the first separation layer includes an airgap or a material having a dielectric constant less than a dielectric constant of silicon nitride.



[[Category:H10B12/00]]