View source for 18972067. SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER (SAMSUNG ELECTRONICS CO., LTD.)

=SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Byounghak Hong of Albany NY US|Byounghak Hong of Albany NY US]][[Category:Byounghak Hong of Albany NY US]]

[[:Category:Seunghyun Song of Albany NY US|Seunghyun Song of Albany NY US]][[Category:Seunghyun Song of Albany NY US]]

[[:Category:Kang-ill Seo of Albany NY US|Kang-ill Seo of Albany NY US]][[Category:Kang-ill Seo of Albany NY US]]

[[:Category:Daewon Ha of Hwaseong-si KR|Daewon Ha of Hwaseong-si KR]][[Category:Daewon Ha of Hwaseong-si KR]]

[[:Category:Jason Martineau of Milpitas CA US|Jason Martineau of Milpitas CA US]][[Category:Jason Martineau of Milpitas CA US]]

==SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER==


This abstract first appeared for US patent application 18972067 titled 'SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER

==Original Abstract Submitted==

Presented are structures and methods for forming such structures that allow for electrical or diffusion breaks between transistors of one level of a stacked transistor device, without necessarily requiring that a like electrical or diffusion break exists in another level of the stacked transistor device. Also presented, an electrical break between transistor devices may be formed by providing a channel of a first polarity with a false gate comprising a work-function metal of an opposite polarity.



[[Category:H01L29/40]]
[[Category:H01L21/8238]]
[[Category:H01L27/092]]
[[Category:H01L29/49]]
[[Category:CPC_H10D64/111]]