View source for 18963490. SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:FUJI ELECTRIC CO., LTD.|FUJI ELECTRIC CO., LTD.]]


[[Category:FUJI ELECTRIC CO., LTD.]]

==Inventor(s)==

[[:Category:Shigeki Sato of Matsumoto-city JP|Shigeki Sato of Matsumoto-city JP]][[Category:Shigeki Sato of Matsumoto-city JP]]

[[:Category:Ryu Araki of Matsumoto-city JP|Ryu Araki of Matsumoto-city JP]][[Category:Ryu Araki of Matsumoto-city JP]]

[[:Category:Hiroshi Miyata of Matsumoto-city JP|Hiroshi Miyata of Matsumoto-city JP]][[Category:Hiroshi Miyata of Matsumoto-city JP]]

[[:Category:Soichi Yoshida of Matsumoto-city JP|Soichi Yoshida of Matsumoto-city JP]][[Category:Soichi Yoshida of Matsumoto-city JP]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 18963490 titled 'SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.



[[Category:H01L29/739]]
[[Category:G01R31/26]]
[[Category:H01L27/02]]
[[Category:H01L29/06]]
[[Category:H01L29/866]]
[[Category:CPC_H10D12/461]]