View source for 18940988. SEMICONDUCTOR STRUCTURE (Taiwan Semiconductor Manufacturing Company, LTD.)

=SEMICONDUCTOR STRUCTURE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, LTD.|Taiwan Semiconductor Manufacturing Company, LTD.]]


[[Category:Taiwan Semiconductor Manufacturing Company, LTD.]]

==Inventor(s)==

[[:Category:Meng-Hsuan Hsiao of Hsinchu City (TW)|Meng-Hsuan Hsiao of Hsinchu City (TW)]][[Category:Meng-Hsuan Hsiao of Hsinchu City (TW)]]

[[:Category:Winnie Victoria Wei-Ning Chen of Zhubei City (TW)|Winnie Victoria Wei-Ning Chen of Zhubei City (TW)]][[Category:Winnie Victoria Wei-Ning Chen of Zhubei City (TW)]]

[[:Category:Tung Ying Lee of Hsinchu City (TW)|Tung Ying Lee of Hsinchu City (TW)]][[Category:Tung Ying Lee of Hsinchu City (TW)]]

==SEMICONDUCTOR STRUCTURE==


This abstract first appeared for US patent application 18940988 titled 'SEMICONDUCTOR STRUCTURE

==Original Abstract Submitted==

Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a first transistor over a substrate, including a first channel layer over the substrate, a second channel layer over and spaced apart from the first channel layer in a first direction, and a first source/drain structure attached to the first channel layer and the second channel layer. The semiconductor structure further includes a second transistor over the substrate, including a third channel layer over the substrate, a fourth channel layer over and spaced apart from the third channel layer in the first direction, and a second source/drain structure attached to the third channel layer and the fourth channel layer. In addition, a dimension of the first source/drain structure in the first direction is different from a dimension of the second source/drain structure in the first direction.



[[Category:H01L29/10]]
[[Category:H01L21/8238]]
[[Category:H01L27/092]]
[[Category:H01L29/06]]
[[Category:H01L29/165]]
[[Category:H01L29/66]]
[[Category:H01L29/786]]
[[Category:CPC_H01L29/1083]]