View source for 18890900. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Japan Display Inc.)

=SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:Japan Display Inc.|Japan Display Inc.]]


[[Category:Japan Display Inc.]]

==Inventor(s)==

[[:Category:Akihiro Hanada of Tokyo JP|Akihiro Hanada of Tokyo JP]][[Category:Akihiro Hanada of Tokyo JP]]

[[:Category:Hajime Watakabe of Tokyo JP|Hajime Watakabe of Tokyo JP]][[Category:Hajime Watakabe of Tokyo JP]]

==SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF==


This abstract first appeared for US patent application 18890900 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

==Original Abstract Submitted==

A semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. The second gate electrode includes a second oxide semiconductor having a polycrystalline structure. The second gate electrode is electrically connected to the first gate electrode.



[[Category:H01L27/12]]
[[Category:G02F1/1368]]
[[Category:H01L29/786]]
[[Category:CPC_H10D86/60]]