View source for 18885219. Plasma Source and Plasma Processing Apparatus (Tokyo Electron Limited)

=Plasma Source and Plasma Processing Apparatus=


==Organization Name==

[[:Category:Tokyo Electron Limited|Tokyo Electron Limited]]


[[Category:Tokyo Electron Limited]]

==Inventor(s)==

[[:Category:Taro Ikeda of Yamanashi JP|Taro Ikeda of Yamanashi JP]][[Category:Taro Ikeda of Yamanashi JP]]

[[:Category:Eiki Kamata of Yamanashi JP|Eiki Kamata of Yamanashi JP]][[Category:Eiki Kamata of Yamanashi JP]]

==Plasma Source and Plasma Processing Apparatus==


This abstract first appeared for US patent application 18885219 titled 'Plasma Source and Plasma Processing Apparatus

==Original Abstract Submitted==

There is provided a plasma source comprising: a housing that defines a plasma generation space; a gas inlet disposed at the housing and configured to introduce a gas; a power supply part disposed at the housing and configured to supply a radio frequency (RF) power; a supply port disposed at the housing and configured to supply active species of plasma produced from the gas in the plasma generation space; a dielectric plate that is disposed at the housing, transmits the RF power from the power supply part to the plasma generation space, and has an opening at a center thereof; a slot formed between the power supply part and the dielectric plate and through which the RF power propagates; and a gas supply line disposed at the housing, and having one end connected to the gas inlet and the other end from which a gas is supplied to the opening.



[[Category:H01J37/32]]
[[Category:CPC_H01J37/3244]]