View source for 18825044. SEMICONDUCTOR DEVICE (Mitsubishi Electric Corporation)

<!-- JSON-LD markup for search engines:
{"@context":"https://schema.org","@type":"TechArticle","headline":"SEMICONDUCTOR DEVICE","name":"SEMICONDUCTOR DEVICE","description":"A semiconductor device includes: an emitter layer and a contact layer that are provided in a surface portion of a base layer; a carrier storage layer provided between the base layer and a drift layer;...","datePublished":"2024-09-05","mainEntity":{"@type":"Patent","identifier":"18825044","name":"SEMICONDUCTOR DEVICE","abstract":"A semiconductor device includes: an emitter layer and a contact layer that are provided in a surface portion of a base layer; a carrier storage layer provided between the base layer and a drift layer; and a trench reaching a position deeper than the carrier storage layer and having a gate electrode buried therein. A depth of the contact layer is deeper than that of the emitter layer. An impurity concentration of the carrier storage layer is 1.4E16/cmor less at least in a portion adjacent to the trench.","applicationNumber":"18825044","datePublished":"2024-09-05","inventor":[{"@type":"Person","name":"Kenji SUZUKI"},{"@type":"Person","name":"Yuki HATA"},{"@type":"Person","name":"Shigeo TOI"},{"@type":"Person","name":"Hiromichi INENAGA"},{"@type":"Person","name":"Tomohito KUDO"}],"applicant":{"@type":"Organization","name":"Mitsubishi Electric Corporation"},"additionalProperty":[{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/739"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/06"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/423"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/66"},{"@type":"PropertyValue","name":"CPC Classification","value":"H10D12/481"}]}}
-->

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Mitsubishi Electric Corporation|Mitsubishi Electric Corporation]]


[[Category:Mitsubishi Electric Corporation]]

==Inventor(s)==

[[:Category:Kenji Suzuki of Tokyo JP|Kenji Suzuki of Tokyo JP]][[Category:Kenji Suzuki of Tokyo JP]]

[[:Category:Yuki Hata of Tokyo JP|Yuki Hata of Tokyo JP]][[Category:Yuki Hata of Tokyo JP]]

[[:Category:Shigeo Toi of Tokyo JP|Shigeo Toi of Tokyo JP]][[Category:Shigeo Toi of Tokyo JP]]

[[:Category:Hiromichi Inenaga of Tokyo JP|Hiromichi Inenaga of Tokyo JP]][[Category:Hiromichi Inenaga of Tokyo JP]]

[[:Category:Tomohito Kudo of Tokyo JP|Tomohito Kudo of Tokyo JP]][[Category:Tomohito Kudo of Tokyo JP]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 18825044 titled 'SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

A semiconductor device includes: an emitter layer and a contact layer that are provided in a surface portion of a base layer; a carrier storage layer provided between the base layer and a drift layer; and a trench reaching a position deeper than the carrier storage layer and having a gate electrode buried therein. A depth of the contact layer is deeper than that of the emitter layer. An impurity concentration of the carrier storage layer is 1.4E16/cmor less at least in a portion adjacent to the trench.



[[Category:H01L29/739]]
[[Category:H01L29/06]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]
[[Category:CPC_H10D12/481]]