View source for 18818658. SEMICONDUCTOR DEVICE (ROHM CO., LTD.)

=SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:ROHM CO., LTD.|ROHM CO., LTD.]]


[[Category:ROHM CO., LTD.]]

==Inventor(s)==

[[:Category:Masaki Nagata of Kyoto-shi (JP)|Masaki Nagata of Kyoto-shi (JP)]][[Category:Masaki Nagata of Kyoto-shi (JP)]]

==SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 18818658 titled 'SEMICONDUCTOR DEVICE




==Original Abstract Submitted==

A semiconductor device includes: a semiconductor layer including a surface; a source region and a drain region arranged on the surface and separated from each other in a first direction as viewed in a thickness-wise direction orthogonal to the surface; a channel region formed on the surface between the source region and the drain region, the channel region being adjacent to the source region; a gate electrode arranged on the channel region with a gate insulating film disposed in between; a trench formed between the source region and the drain region; an insulation film arranged on inner walls of the trench; and an embedded electrode arranged in the trench and surrounded by the insulation film.



[[Category:H01L29/78]]
[[Category:H01L29/423]]
[[Category:CPC_H01L29/7816]]