View source for 18818298. VAPOR DEPOSITION PROCESSES (ASM IP Holding B.V.)

=VAPOR DEPOSITION PROCESSES=


==Organization Name==

[[:Category:ASM IP Holding B.V.|ASM IP Holding B.V.]]


[[Category:ASM IP Holding B.V.]]

==Inventor(s)==

[[:Category:Timo Hatanp�� of Espoo (FI)|Timo Hatanp�� of Espoo (FI)]][[Category:Timo Hatanp�� of Espoo (FI)]]

[[:Category:Anton Vihervaara of Helsinki (FI)|Anton Vihervaara of Helsinki (FI)]][[Category:Anton Vihervaara of Helsinki (FI)]]

[[:Category:Mikko Ritala of Espoo (FI)|Mikko Ritala of Espoo (FI)]][[Category:Mikko Ritala of Espoo (FI)]]

==VAPOR DEPOSITION PROCESSES==


This abstract first appeared for US patent application 18818298 titled 'VAPOR DEPOSITION PROCESSES




==Original Abstract Submitted==

The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.



[[Category:C23C16/455]]
[[Category:C23C16/08]]
[[Category:CPC_C23C16/45553]]