View source for 18801879. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)

=NITRIDE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:ROHM CO., LTD.|ROHM CO., LTD.]]


[[Category:ROHM CO., LTD.]]

==Inventor(s)==

[[:Category:Tomonori Kato of Kyoto-shi (JP)|Tomonori Kato of Kyoto-shi (JP)]][[Category:Tomonori Kato of Kyoto-shi (JP)]]

==NITRIDE SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 18801879 titled 'NITRIDE SEMICONDUCTOR DEVICE

==Original Abstract Submitted==

A nitride semiconductor device includes an electron transit layer, an electron supply layer, a gate layer, a gate electrode on the gate layer, a source electrode, and a drain electrode. The gate layer includes a first gate portion, a second gate portion, and a recess between the first gate portion and the second gate portion. The gate electrode is arranged over both the first gate portion and the second gate portion. The nitride semiconductor device further includes an insulator located in the recess.



[[Category:H01L29/423]]
[[Category:H01L29/20]]
[[Category:H01L29/40]]
[[Category:H01L29/778]]
[[Category:CPC_H01L29/42316]]