View source for 18786100. PROGRAMMING DATA IN MEMORY (MICRON TECHNOLOGY, INC.)

=PROGRAMMING DATA IN MEMORY=


==Organization Name==

[[:Category:MICRON TECHNOLOGY, INC.|MICRON TECHNOLOGY, INC.]]


[[Category:MICRON TECHNOLOGY, INC.]]

==Inventor(s)==

[[:Category:Yu-Chung Lien of San Jose CA US|Yu-Chung Lien of San Jose CA US]][[Category:Yu-Chung Lien of San Jose CA US]]

[[:Category:Jun Wan of San Jose CA US|Jun Wan of San Jose CA US]][[Category:Jun Wan of San Jose CA US]]

[[:Category:Zhenming Zhou of San Jose CA US|Zhenming Zhou of San Jose CA US]][[Category:Zhenming Zhou of San Jose CA US]]

[[:Category:Ying Tai of Mountain View CA US|Ying Tai of Mountain View CA US]][[Category:Ying Tai of Mountain View CA US]]

==PROGRAMMING DATA IN MEMORY==


This abstract first appeared for US patent application 18786100 titled 'PROGRAMMING DATA IN MEMORY

==Original Abstract Submitted==

Programming data in memory is described herein. An example apparatus includes an array of memory cells having a plurality of access lines to which the cells are coupled, and a processing device that performs a program operation on the array, including programming data to be stored in one page of cells of the array to the cells of the array coupled to a first one of the access lines, programming additional data to be stored in that page to the cells of the array coupled to a second one of the access lines adjacent to the first one of the access lines, sensing the data programmed to the cells of the array coupled to the first one of the access lines, and programming data to be stored in two pages of cells of the array to the cells of the array coupled to the first one of the access lines.



[[Category:G06F3/06]]
[[Category:CPC_G06F3/0644]]