View source for 18768579. INTEGRATED CIRCUIT DEVICE (Samsung Electronics Co., Ltd.)

=INTEGRATED CIRCUIT DEVICE=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Sangmin Lee of Suwon-si KR|Sangmin Lee of Suwon-si KR]][[Category:Sangmin Lee of Suwon-si KR]]

[[:Category:Yeonjin Hwang of Suwon-si KR|Yeonjin Hwang of Suwon-si KR]][[Category:Yeonjin Hwang of Suwon-si KR]]

[[:Category:Munjun Kim of Suwon-si KR|Munjun Kim of Suwon-si KR]][[Category:Munjun Kim of Suwon-si KR]]

[[:Category:Iksoo Kim of Suwon-si KR|Iksoo Kim of Suwon-si KR]][[Category:Iksoo Kim of Suwon-si KR]]

[[:Category:Junwon Lee of Suwon-si KR|Junwon Lee of Suwon-si KR]][[Category:Junwon Lee of Suwon-si KR]]

[[:Category:Younseok Choi of Suwon-si KR|Younseok Choi of Suwon-si KR]][[Category:Younseok Choi of Suwon-si KR]]

==INTEGRATED CIRCUIT DEVICE==


This abstract first appeared for US patent application 18768579 titled 'INTEGRATED CIRCUIT DEVICE

==Original Abstract Submitted==

An integrated circuit device and a method of manufacturing the same are provided. The integrated circuit device includes: a substrate having a plurality of active regions; a bit line extending on the substrate in a horizontal direction parallel to an upper surface of the substrate; a direct contact electrically connected to a first active region of the plurality of active regions and connected to the bit line; a contact plug electrically connected to a second active region of the plurality of active regions adjacent to the first active region; and an outer insulation spacer between the bit line and the contact plug and overlapping the bit line in a vertical direction perpendicular to the upper surface of the substrate. The outer insulation spacer includes a doped region doped with a metal element.



[[Category:H10B12/00]]
[[Category:CPC_H10B12/485]]