View source for 18757107. Light-Emitting Device (Semiconductor Energy Laboratory Co., Ltd.)

=Light-Emitting Device=


==Organization Name==

[[:Category:Semiconductor Energy Laboratory Co., Ltd.|Semiconductor Energy Laboratory Co., Ltd.]]


[[Category:Semiconductor Energy Laboratory Co., Ltd.]]

==Inventor(s)==

[[:Category:Toshiki Sasaki of Kawasaki (JP)|Toshiki Sasaki of Kawasaki (JP)]][[Category:Toshiki Sasaki of Kawasaki (JP)]]

[[:Category:Nobuharu Ohsawa of Zama (JP)|Nobuharu Ohsawa of Zama (JP)]][[Category:Nobuharu Ohsawa of Zama (JP)]]

[[:Category:Hiromi Seo of Sagamihara (JP)|Hiromi Seo of Sagamihara (JP)]][[Category:Hiromi Seo of Sagamihara (JP)]]

[[:Category:Shinya Fukuzaki of Atsugi (JP)|Shinya Fukuzaki of Atsugi (JP)]][[Category:Shinya Fukuzaki of Atsugi (JP)]]

==Light-Emitting Device==


This abstract first appeared for US patent application 18757107 titled 'Light-Emitting Device




==Original Abstract Submitted==

A light-emitting device that can be used in a high-resolution display apparatus and has a low driving voltage and high current efficiency is provided. A tandem light-emitting device is fabricated through a photolithography process and includes a plurality of light-emitting units and an intermediate layer therebetween. The intermediate layer includes a layer that includes a metal oxide and an organic compound having a phenanthroline ring with an electron-donating group. The layer of the intermediate layer is in contact with a light-emitting unit on the anode side.



[[Category:H10K50/13]]
[[Category:H10K71/20]]
[[Category:CPC_H10K50/131]]