View source for 18747457. SEMICONDUCTOR STRUCTURE FOR REDUCING STRAY CAPACITANCE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

=SEMICONDUCTOR STRUCTURE FOR REDUCING STRAY CAPACITANCE AND METHOD OF FORMING THE SAME=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.]]

==Inventor(s)==

[[:Category:SHIH-WEI Peng of HSINCHU CITY (TW)|SHIH-WEI Peng of HSINCHU CITY (TW)]][[Category:SHIH-WEI Peng of HSINCHU CITY (TW)]]

[[:Category:WEI-CHENG Lin of TAICHUNG CITY (TW)|WEI-CHENG Lin of TAICHUNG CITY (TW)]][[Category:WEI-CHENG Lin of TAICHUNG CITY (TW)]]

[[:Category:JIANN-TYNG Tzeng of HSINCHU (TW)|JIANN-TYNG Tzeng of HSINCHU (TW)]][[Category:JIANN-TYNG Tzeng of HSINCHU (TW)]]

==SEMICONDUCTOR STRUCTURE FOR REDUCING STRAY CAPACITANCE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18747457 titled 'SEMICONDUCTOR STRUCTURE FOR REDUCING STRAY CAPACITANCE AND METHOD OF FORMING THE SAME

The semiconductor structure described in the patent application consists of a first transistor and a second transistor stacked on top of each other. The first transistor includes a gate, a first active region, and two conductive lines on either side of the active region. The second transistor also includes a gate, a second active region, and two conductive lines on either side of the active region. 

* The gate of the second transistor extends beyond the first active region by a greater length than the gate of the first transistor.
* One of the conductive lines in each transistor extends beyond the first active region by a length greater than the other conductive lines.

Potential Applications:
- This semiconductor structure could be used in the manufacturing of advanced electronic devices such as smartphones, tablets, and computers.
- It may find applications in the development of high-performance integrated circuits for various industries.

Problems Solved:
- This technology addresses the need for more efficient and compact transistor designs in semiconductor devices.
- It aims to improve the performance and functionality of electronic devices by optimizing the layout of transistors.

Benefits:
- Enhanced performance and speed of electronic devices.
- Increased efficiency and reduced power consumption.
- Compact design for smaller and more portable devices.

Commercial Applications:
- The technology could be utilized by semiconductor companies to develop next-generation electronic products with improved performance and functionality.
- It may have implications for the consumer electronics market, leading to the production of faster and more energy-efficient devices.

Questions about the technology:
1. How does the extended gate length in the second transistor contribute to its performance compared to the first transistor?
2. What are the potential challenges in implementing this semiconductor structure in mass production processes?

Frequently Updated Research:
- Stay updated on advancements in semiconductor technology and transistor design to understand the latest trends and innovations in the field.


==Original Abstract Submitted==

A semiconductor structure includes a first transistor and a second transistor over the first transistor. The first transistor includes: a gate extending in a first direction; a first active region arranged extending in a second direction; and a first conductive line and a second conductive line arranged on two sides of the first active region. The second transistor includes: the gate; a second active region; and a third conductive line and a fourth conductive line arranged on two sides of the second active region. The gate has a first portion and a second portion extending beyond the first active region by a first length and a second length greater than the first length. One of the first to fourth conductive lines has a third portion and a fourth portion extending beyond the first active region by a third length and a length greater than the third length.



[[Category:H01L27/12]]
[[Category:G06F30/392]]
[[Category:G06F119/12]]
[[Category:CPC_H01L27/124]]