View source for 18740558. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)

=NITRIDE SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:ROHM CO., LTD.|ROHM CO., LTD.]]


[[Category:ROHM CO., LTD.]]

==Inventor(s)==

[[:Category:Shinya Takado of Kyoto-shi (JP)|Shinya Takado of Kyoto-shi (JP)]][[Category:Shinya Takado of Kyoto-shi (JP)]]

==NITRIDE SEMICONDUCTOR DEVICE==


This abstract first appeared for US patent application 18740558 titled 'NITRIDE SEMICONDUCTOR DEVICE




==Original Abstract Submitted==

A nitride semiconductor device includes a passivation layer, which covers a gate layer, and a field plate electrode, which is arranged on the passivation layer. The gate layer includes a gate layer main body and a drain-side extension. The passivation layer includes a first part overlapping both the drain-side extension and the field plate electrode in plan view, a second part continuous with the first part and located between the drain-side extension and the drain opening, and a first step located in a region including a boundary of the first part and the second part. The first part has a first thickness from the upper step surface to an upper surface of the drain-side extension. The second part has a second thickness from the lower step surface to an upper surface of the electron supply layer. The first thickness is greater than the second thickness.



[[Category:H01L29/20]]
[[Category:H01L29/40]]
[[Category:H01L29/423]]
[[Category:H01L29/778]]
[[Category:CPC_H01L29/2003]]